Ion source with coil structure capable of changing along with discharge cavity structure

A discharge chamber and ion source technology, applied in the field of ion sources, can solve problems such as uneven etching rate and affect etching uniformity, achieve uniform plasma density distribution, improve etching uniformity, and ensure etching uniformity Effect

Pending Publication Date: 2022-07-08
JIANGSU LEUVEN INSTR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Affected by the RF power and working pressure, the plasma density distribution in the reaction chamber also has a saddle-shaped trend ( figure 2 Indicated by the dotted line), due to the uneven distribution of plasma density, the etching rate is uneven, which affects the uniformity of etching

Method used

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  • Ion source with coil structure capable of changing along with discharge cavity structure
  • Ion source with coil structure capable of changing along with discharge cavity structure
  • Ion source with coil structure capable of changing along with discharge cavity structure

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Embodiment Construction

[0039] The present invention will be described in further detail below with reference to the accompanying drawings and specific preferred embodiments.

[0040] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "left side", "right side", "upper", "lower part", etc. are based on the orientation or positional relationship shown in the drawings, only For the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a particular orientation, be constructed and operate in a particular orientation, "first", "second", etc. importance, and therefore should not be construed as a limitation to the present invention. The specific dimensions used in this embodiment are only for illustrating the technical solution, and do not limit the protection scope of the present invention.

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Abstract

The invention discloses an ion source with a coil structure capable of changing along with a discharge cavity structure. The ion source comprises an ion source cavity, a coil support, a coil and a discharge cavity body which are sequentially and coaxially arranged from outside to inside, the discharge cavity body comprises a discharge cavity top, a discharge cavity middle part and a discharge cavity bottom; the top of the discharge cavity is a hollow ring; the bottom of the discharge cavity is a disc with an air inlet in the center; the discharge cavity middle part comprises an upper end straight cylinder and a lower end Dome-shaped cylinder; the outer ring of the coil support is mounted on the inner wall surface of the ion source cavity, and the shape of the inner wall surface of the coil support is the same as that of the discharge cavity body; the coil is arranged in the coil support and comprises a cylindrical spiral coil and a Dome type coil; the position of the cylindrical spiral coil corresponds to the position of the upper end straight cylinder, and the position of the Dome-type coil corresponds to the position of the lower end Dome-type cylinder. And the distance from each layer of coil to the outer wall surface of the discharge cavity body is equal. The incense coil-shaped ICP source and the cylindrical ICP source are combined, the plasma density in the discharge cavity body can be adjusted in a segmented mode, and the etching uniformity is improved.

Description

technical field [0001] The invention relates to the field of ion beam etching, in particular to an ion source whose coil structure can be changed with the discharge cavity structure. Background technique [0002] An ion source is a device that ionizes neutral atoms or molecules and extracts an ion beam from it. It is various types of ion accelerators, mass spectrometers, electromagnetic isotope separators, ion implanters, ion beam etching devices, and ion thrusters. And an indispensable part of equipment such as neutral beam injectors in controlled fusion devices. [0003] Radio Frequency Inductively Coupled Plasma (RFICP) sources can resonate in the megahertz range and can efficiently generate plasma at low gas pressures and transfer energy to the plasma efficiently. Due to its simple structure, it can generate high-density plasma The advantages of pure plasma, long service life, and good performance-price ratio, so it has developed rapidly in recent years. The currently u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01J37/08
CPCH01J37/3211H01J37/3244H01J37/08H01J37/32H01J37/32467H01J37/3053
Inventor 张瑶瑶刘小波胡冬冬张怀东刘海洋李娜郭颂李晓磊许开东
Owner JIANGSU LEUVEN INSTR CO LTD
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