Semiconductor device, manufacturing method and memory system

Abstract

The invention provides a semiconductor device, a manufacturing method and a memory system. The semiconductor device comprises a first semiconductor structure and a second semiconductor structure, wherein the first semiconductor structure comprises a semiconductor layer, a stacking structure located on the semiconductor layer, a channel structure penetrating through the stacking structure and electrically contacting with the semiconductor layer, and a grid line isolation structure penetrating through the stacking structure and extending into the semiconductor layer; the stacking structure comprises channel regions and isolation regions, the channel regions and the isolation regions are alternately arranged in the first direction, the channel structures are located in the channel regions, and the grid line isolation structures are located in the isolation regions; the source contact is positioned on the isolation region and is in contact with one surface, far away from the stacked structure, of the semiconductor layer; the edge, extending in the first direction, of the orthographic projection of the source electrode contact on the semiconductor layer is not overlapped with the edge, extending in the first direction, of the orthographic projection of the grid line isolation structure on the semiconductor layer.

Description

technical field [0001] Embodiments of the present disclosure relate to the field of semiconductor manufacturing, and in particular, to a semiconductor device, a manufacturing method, and a memory system. Background technique [0002] With the continuous development of semiconductor technology, the current memory manufacturing technology has gradually transitioned from a simple planar structure to a more complex three-dimensional structure, and the integration density is improved by three-dimensionally arranging memory cells on a substrate. The technology research and development of this three-dimensional memory device is one of the mainstream of international research and development. [0003] However, in the manufacturing process of a three-dimensional memory device, a backside source contact is usually formed on the channel structure to electrically lead out the channel structure. However, there is a risk of damaging the channel structure when forming the backside source c...

AI Technical Summary

Problems solved by technology

[0003] However, in the manufacturing process of three-dimensional memory devices, the channel structure is usually electrically drawn out by forming a back source contact on the channel structure. However, there is a risk of destroying the channel structure when forming the back source contact.

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