Transformer device and semiconductor device
A technology of transformers and conductors, which is applied in the direction of semiconductor devices, transformer/inductor parts, semiconductor/solid-state device parts, etc., and can solve problems such as insulation layer deformation and joint quality degradation
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Embodiment approach 2
[0064] Figure 5 This is the transformer device 102 according to the second embodiment.
[0065] The transformer device 102 is different from the transformer device 101 of the first embodiment in that the intermediate layer 9 is formed so as to cover the entire upper surface and side surfaces of the insulating layer 8 . The transformer arrangement 102 is otherwise identical to the transformer arrangement 101 .
[0066] In the transformer device 102 , by covering the entire upper surface and side surfaces of the insulating layer 8 with the intermediate layer 9 during etching, the insulating layer 8 can be prevented from being damaged during the etching when the pattern of the intermediate layer 9 is formed, thereby preventing the primary coil from being damaged. The insulation between the secondary coil is deteriorated.
[0067]
[0068] Image 6 It is a figure which shows the transformer apparatus 103 which concerns on Embodiment 3. FIG.
[0069]The transformer device 10...
Embodiment approach 5
[0076] Figure 8 It is a figure which shows the transformer apparatus 105 which concerns on Embodiment 5. FIG.
[0077] Figure 9 This is a plan view showing the insulating layer 8 and the intermediate layer 9 of the transformer device 105 according to the fifth embodiment extracted. exist Figure 9 In the figure, the insulating layer 8 is only shown in the vicinity of the intermediate layer 9 . In addition, in Figure 9 , the arrangement of the pads 21 is shown by the dotted line.
[0078] The transformer device 105 is different from the transformer device 101 of the first embodiment in that the intermediate layer 9 is provided with a hole penetrating in the vertical direction. The transformer arrangement 105 is otherwise identical to the transformer arrangement 101 . In particular, as in the case of the transformer device 101 , in the transformer device 105 , the intermediate layer 9 has a higher hardness than the insulating layer 8 and the insulating layer 10 , and th...
Embodiment approach 7
[0091] Figure 12 It is a figure which shows the transformer apparatus 107 which concerns on Embodiment 7. FIG.
[0092] The transformer device 107 has a configuration in which an insulating layer 32 is added between the insulating layer 8 and the insulating layer 10 with respect to the transformer device 101 of the first embodiment. The transformer arrangement 107 is otherwise identical to the transformer arrangement 101 . In particular, also in the transformer device 107, the pads 21 are arranged at positions overlapping the intermediate layer 9 at least partially in plan view. In addition, in the transformer device 107 , the intermediate layer 9 has higher hardness than the insulating layer 8 , the insulating layer 10 , and the insulating layer 32 .
[0093] The insulating layer 32 is formed using, for example, polyimide. The insulating layer 32 may be an organic insulating layer formed using an organic insulating material other than polyimide. In any of the transformer...
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Abstract
Description
Claims
Application Information
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