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Transformer device and semiconductor device

A technology of transformers and conductors, which is applied in the direction of semiconductor devices, transformer/inductor parts, semiconductor/solid-state device parts, etc., and can solve problems such as insulation layer deformation and joint quality degradation

Pending Publication Date: 2022-07-19
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the prior art, there was a problem that when bonding a wire to a pad formed on an insulating layer that insulates between coils, the insulating layer was deformed and the bonding quality deteriorated.

Method used

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  • Transformer device and semiconductor device
  • Transformer device and semiconductor device
  • Transformer device and semiconductor device

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Experimental program
Comparison scheme
Effect test

Embodiment approach 2

[0064] Figure 5 This is the transformer device 102 according to the second embodiment.

[0065] The transformer device 102 is different from the transformer device 101 of the first embodiment in that the intermediate layer 9 is formed so as to cover the entire upper surface and side surfaces of the insulating layer 8 . The transformer arrangement 102 is otherwise identical to the transformer arrangement 101 .

[0066] In the transformer device 102 , by covering the entire upper surface and side surfaces of the insulating layer 8 with the intermediate layer 9 during etching, the insulating layer 8 can be prevented from being damaged during the etching when the pattern of the intermediate layer 9 is formed, thereby preventing the primary coil from being damaged. The insulation between the secondary coil is deteriorated.

[0067]

[0068] Image 6 It is a figure which shows the transformer apparatus 103 which concerns on Embodiment 3. FIG.

[0069]The transformer device 10...

Embodiment approach 5

[0076] Figure 8 It is a figure which shows the transformer apparatus 105 which concerns on Embodiment 5. FIG.

[0077] Figure 9 This is a plan view showing the insulating layer 8 and the intermediate layer 9 of the transformer device 105 according to the fifth embodiment extracted. exist Figure 9 In the figure, the insulating layer 8 is only shown in the vicinity of the intermediate layer 9 . In addition, in Figure 9 , the arrangement of the pads 21 is shown by the dotted line.

[0078] The transformer device 105 is different from the transformer device 101 of the first embodiment in that the intermediate layer 9 is provided with a hole penetrating in the vertical direction. The transformer arrangement 105 is otherwise identical to the transformer arrangement 101 . In particular, as in the case of the transformer device 101 , in the transformer device 105 , the intermediate layer 9 has a higher hardness than the insulating layer 8 and the insulating layer 10 , and th...

Embodiment approach 7

[0091] Figure 12 It is a figure which shows the transformer apparatus 107 which concerns on Embodiment 7. FIG.

[0092] The transformer device 107 has a configuration in which an insulating layer 32 is added between the insulating layer 8 and the insulating layer 10 with respect to the transformer device 101 of the first embodiment. The transformer arrangement 107 is otherwise identical to the transformer arrangement 101 . In particular, also in the transformer device 107, the pads 21 are arranged at positions overlapping the intermediate layer 9 at least partially in plan view. In addition, in the transformer device 107 , the intermediate layer 9 has higher hardness than the insulating layer 8 , the insulating layer 10 , and the insulating layer 32 .

[0093] The insulating layer 32 is formed using, for example, polyimide. The insulating layer 32 may be an organic insulating layer formed using an organic insulating material other than polyimide. In any of the transformer...

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Abstract

The invention relates to a transformer device and a semiconductor device. Provided is a transformer device in which a wire can be bonded with high quality to a pad on the upper side of an insulating layer that insulates between coils. This transformer device is provided with: a planar first coil; a first insulating layer provided on the upper side of the first coil; an intermediate layer provided on the upper side of the first insulating layer; a second insulating layer provided on the upper side of the intermediate layer; a planar second coil provided on the upper side of the second insulating layer and facing the first coil; and a conductive pad provided on the upper side of the second insulating layer and connected to one end side of the second coil, the pad being disposed at a position at least partially overlapping the intermediate layer in plan view, the intermediate layer having a higher hardness than the first insulating layer and the second insulating layer.

Description

technical field [0001] The present invention relates to a transformer device and a semiconductor device. Background technique [0002] As means for signal transmission between two circuits operating at different reference potentials, a technique of forming a coreless transformer on a semiconductor substrate, and using an organic insulating film between coils of the coreless transformer are known. technology of insulating layers. Such a technique is disclosed in Patent Document 1, for example. [0003] Patent Document 1: Japanese Patent Laid-Open No. 2017-118128 [0004] In the prior art, when a wire is bonded to a pad formed on an insulating layer that insulates between coils, the insulating layer is deformed, and the bonding quality is degraded. SUMMARY OF THE INVENTION [0005] The present invention has been made to solve the above-mentioned problems, and an object thereof is to provide a transformer device capable of high-quality wire bonding to pads on the upper sid...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F27/30H01F27/32H01L23/64H10N97/00
CPCH01F27/306H01F27/324H01L23/645H01L28/10H01F2027/2809H01F27/2804H01F27/29H01F5/04H01L23/5227H01L23/53295H01L2224/48091H01L2224/48471H01L2924/00014H01L2224/48195H01L24/48H01L2224/45099H01L2224/05599H01F17/0013H01F2017/002H01F2027/2819
Inventor 今坂俊博吉野学山口靖雄鸟井阳平
Owner MITSUBISHI ELECTRIC CORP
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