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Semiconductor device

A technology of semiconductor and conductor parts, applied in semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve problems such as reliability decline and welding part deterioration, and achieve the effect of ensuring reliability

Pending Publication Date: 2022-07-19
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that the soldered part of the protection mechanism and the circuit pattern deteriorates, and the reliability decreases.

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0024] figure 1 It is a cross-sectional view showing the semiconductor device according to the first embodiment. The case 2 is joined to the metal base plate 1 . Inside the casing 2 , an insulating substrate 3 is provided on the base plate 1 . The insulating substrate 3 includes an insulating plate 4 such as ceramics, a metal pattern 5 on the lower surface of the insulating plate 4 , and circuit patterns 6 , 7 , and 8 on the upper surface of the insulating plate 4 . The metal pattern 5 is joined to the base plate 1 by the solder 9 . The material of the circuit patterns 6, 7, and 8 is copper, for example, C1020, C1921, and the like.

[0025] The semiconductor chip 10 is mounted on the insulating substrate 3 . The lower surface electrode of the semiconductor chip 10 is connected to the circuit pattern 6 by the solder 11 . The upper surface electrode of the semiconductor chip 10 is connected to the electrode 12 of the case 2 through the wire 13 .

[0026] One end of the cir...

Embodiment approach 2

[0036] Figure 4 It is a perspective view showing the overcurrent cut-off mechanism according to the second embodiment. Figure 5 It is a cross-sectional view showing the overcurrent cutoff mechanism according to the second embodiment. The first and second conductor portions 22 and 23 of the overcurrent interrupt mechanism 15 constitute parallel flat plates that stand upright with respect to the upper surface of the insulating substrate 3 . Thereby, the distance from the insulating substrate 3 to the constricted portion 24 can be secured. Therefore, the impact when the constricted portion 24 is broken due to the flow of an overcurrent is easily transferred to the outside of the device, and the breakage of the insulating substrate 3 can be suppressed. Furthermore, since the insulating properties of the semiconductor device can be ensured, it is possible to prevent the leakage of current in the device in which the semiconductor device is mounted. In addition, since it is a pa...

Embodiment approach 3

[0038] Image 6 It is a perspective view showing the overcurrent cutoff mechanism according to the third embodiment. Figure 7 It is a cross-sectional view showing the overcurrent cutoff mechanism according to the third embodiment. In Embodiment 2, when the first and second conductor portions 22 and 23 that are parallel flat plates are in contact with each other, the current does not flow through the constricted portion 24, and the blocking function is impaired. Therefore, in the present embodiment, the insulator 26 is inserted between the first and second conductor portions 22 and 23 that are parallel flat plates. Thereby, it can prevent that the 1st and 2nd conductor parts 22 and 23 which become parallel flat plates come into contact with each other and impair the cutting function. Other structures and effects are the same as those of the second embodiment.

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Abstract

A semiconductor device capable of ensuring reliability is obtained. The insulating substrate (3) has circuit patterns (6, 7, 8). The semiconductor chip (10) is mounted on the insulating substrate (3) and is connected to the circuit patterns (6, 7, 8). The overcurrent interrupting mechanism (15) is made of the same material as the circuit patterns (6, 7, 8), is connected in series with the circuit patterns (6, 7, 8), and melts and breaks when an overcurrent flows.

Description

technical field [0001] The present invention relates to semiconductor devices. Background technique [0002] For example, it has been proposed to provide a protection mechanism to protect semiconductor chips and the like by melting and disconnection when an overcurrent flows in a semiconductor device used for controlling a large current (for example, refer to Patent Document 1). [0003] Patent Document 1: Japanese Patent Laid-Open No. 2007-123644 [0004] In the related art, the material of the protection mechanism is nickel or aluminum, which is different from copper which is the material of the circuit pattern. Therefore, there is a possibility that the two may deform differently during the temperature cycle when the element is driven. Therefore, there is a problem that the soldered portion between the protection mechanism and the circuit pattern is deteriorated and reliability is lowered. SUMMARY OF THE INVENTION [0005] The present invention has been made in order...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/62
CPCH01L23/62H01L23/053H01L23/10H01L24/49H01L2224/32225H01L2924/19107H01L2924/19105H01L2224/48464H01L2924/00014H01L2224/73265H01L2224/48091H01L2224/29101H01L24/29H01L24/73H01L24/48H01L2224/83801H01L24/83H01L24/32H01L2924/181H01L2224/45099H01L2924/14H01L2924/00012H01L23/49833H01L23/047H01L2224/49175H01L23/49838
Inventor 木村义孝益本宽之
Owner MITSUBISHI ELECTRIC CORP