Cleaning process for large-size imbricated battery piece

A battery chip, large-size technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of high cleaning cost, long cleaning time, poor effect, etc., to shorten cleaning time, increase production line productivity, and reduce manufacturing costs Effect

Pending Publication Date: 2022-07-29
DONGFANG HUANSHENG PHOTOVOLTAIC (JIANGSU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a cleaning process for large-size shingled cells, especially suitable for the cleaning of texturing, which solves the problem of product productivity and rough surface of silicon wafers caused by the long cleaning time and poor effect of the existing RCA cleaning process. Technical problems of low yield and high cleaning cost

Method used

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  • Cleaning process for large-size imbricated battery piece
  • Cleaning process for large-size imbricated battery piece

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] S1: The silicon wafer is cleaned in a mixed alkaline solution of sodium hydroxide and deionized water, wherein the temperature of the alkaline solution is 65° C., cleaning is performed for 5 minutes, and ozone is introduced into the entire cleaning process. The volume concentration of sodium hydroxide is 3.7%; and the flow rate of ozone is 5L / min.

[0032] S2: Put the cleaned silicon wafer into deionized water for rinsing, and the rinsing temperature is 85°C; the rinsing time is 3 minutes.

[0033] S3: the rinsed silicon wafer is quickly air-dried, and the air-drying time is 2 minutes.

Embodiment 2

[0035] S1: The silicon wafer is cleaned in a mixed alkaline solution of sodium hydroxide and deionized water, wherein the temperature of the alkaline solution is 70° C., cleaning is performed for 4 minutes, and ozone is introduced into the entire cleaning process. The volume concentration of sodium hydroxide is 3.7%; and the flow rate of ozone is 5L / min.

[0036] S2: Put the cleaned silicon wafer into deionized water for rinsing, and the rinsing temperature is 80°C; the rinsing time is 5 minutes.

[0037] S3: the rinsed silicon wafer is quickly air-dried, and the air-drying time is 2 minutes.

Embodiment 3

[0039] S1: The silicon wafer is cleaned in a mixed alkaline solution of sodium hydroxide and deionized water, wherein the temperature of the alkaline solution is 75° C., cleaning is performed for 3 minutes, and ozone is introduced into the entire cleaning process. The volume concentration of sodium hydroxide is 3.5%; and the flow rate of ozone is 7L / min.

[0040] S2: Put the cleaned silicon wafer into deionized water for rinsing, and the rinsing temperature is 75°C; the rinsing time is 4 minutes.

[0041] S3: the rinsed silicon wafer is quickly air-dried, and the air-drying time is 2 minutes.

[0042] By using the method of the present invention, the results obtained by cleaning the silicon wafers of the same silicon wafer type through the processes in the first, second and third embodiments are compared with the texturing cleaning process in the prior art. The results of the dirt particle cleaning rate are shown in the table below:

[0043] Table 1 Comparison of test result...

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Abstract

The invention provides a cleaning process for a large-size imbricated battery piece, which comprises the following steps of: cleaning a silicon wafer in an alkaline solution at a set temperature for a certain time, and continuously introducing ozone in the cleaning process; and then the cleaned silicon wafer is rinsed. According to the cleaning process provided by the invention, the cleaning solution of sodium hydroxide and water in an optimal ratio is obtained, and ozone is introduced in the cleaning process, so that the surface of the silicon wafer can be subjected to complex physical and chemical reactions; organic dirt, dust, other particle dirt, metal ion dirt and the like generated in the linear cutting process of the solar silicon wafer are effectively removed, and the cleaning rate is at least 99.5% or above.

Description

technical field [0001] The invention belongs to the technical field of solar cell cleaning, and in particular relates to a cleaning process for large-sized shingled cells. Background technique [0002] Through continuous technological innovation, each link of the photovoltaic industry chain has gradually developed to improve cell efficiency and module power, reduce the cost of electricity, and help photovoltaic grid parity. On the battery side, high-efficiency PERC cells have become the mainstream technology; on the module side, high-density module technologies such as double-sided, half-cell, MBB, and shingled are constantly being introduced; on the silicon wafer side, large-size silicon wafers are becoming the industry development trend. The increase in the size of silicon wafers can increase the output of cell and module production lines, reduce the production cost per watt, and at the same time directly increase the module power, helping photovoltaic modules enter the er...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L31/18
CPCH01L21/02057H01L21/02082H01L31/1804
Inventor 谈锦彪从海泉马敏杰王鹏马擎天
Owner DONGFANG HUANSHENG PHOTOVOLTAIC (JIANGSU) CO LTD
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