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Method of removing impurities in thin film and substrate processing apparatus

A technology for processing equipment and thin films, which is applied in coatings, gaseous chemical plating, metal material coating processes, etc., can solve problems such as increasing film resistivity and dielectric constant, improve reliability, improve film characteristics, and prevent oxidation Effect

Pending Publication Date: 2022-07-29
EUGENE TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the ligand can act as an impurity within the film, which can lead to the problem of increasing the resistivity (or dielectric constant) of the film

Method used

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  • Method of removing impurities in thin film and substrate processing apparatus
  • Method of removing impurities in thin film and substrate processing apparatus
  • Method of removing impurities in thin film and substrate processing apparatus

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Embodiment Construction

[0070] Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be explained in detail. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various forms. The embodiments of the present invention are provided only to complete the disclosure of the present invention, and to fully inform those of ordinary skill in the art of the scope of the present invention. Throughout the description, like reference numbers are assigned to like elements, the drawings may be partially exaggerated in size to accurately illustrate embodiments of the invention, and like reference numbers refer to like elements throughout the drawings.

[0071] figure 1 is a flowchart illustrating a method of removing impurities in a thin film according to an embodiment of the present invention.

[0072] refer to figure 1 , according to an embodiment, a method for removing impurities in a thin film includes the fo...

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Abstract

The invention relates to a method for removing impurities in a thin film and a substrate processing apparatus. The method of removing impurities in a thin film includes the steps of: providing a substrate having a thin film formed thereon in a process chamber; supplying a first gas that reacts with and binds to impurities contained in the thin film into the process chamber; discharging a combined product of the impurities and the first gas by decompressing the inside of the process chamber after the supply of the first gas is stopped; curing the thin film by supplying a second gas different from the first gas into the process chamber; and stopping the supply of the second gas and discharging the remaining second gas from the interior of the process chamber. According to the invention, impurities contained in the film can be effectively removed.

Description

technical field [0001] The present invention relates to a method of removing impurities in a thin film and a substrate processing apparatus, and more particularly, to a method of removing impurities from a thin film and a substrate processing equipment. Background technique [0002] During semiconductor fabrication processes, methods such as atomic layer deposition (ALD) and chemical vapor deposition (CVD) are used to deposit thin films and use the thin films as semiconductor devices. Here, a metal precursor compound containing a metal element and a ligand (or a bind element) is mainly used as a source gas for thin film deposition. [0003] Generally, when a metal precursor compound is used to deposit a thin film, the bond between the metal element and the ligand is not effectively broken, so that the metal element (or metal element) having a part of the ligand is deposited oxides or nitrides). Therefore, the ligand can act as an impurity in the thin film, which can lead ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L21/314H01L21/3205
CPCH01L21/67017H01L21/02271H01L21/0262H01L21/32051C23C16/407C23C16/56H01L21/02172H01L21/02337H01L21/67103H01L21/67757H01L21/02565H01L21/02554H01L21/02614H01L21/67098H01L21/28556H01L21/02334
Inventor 崔圭鎭崔圭镐黄相赫
Owner EUGENE TECH CO LTD