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Preparation method of high-brightness CSP (Chip Scale Package) flip LED (Light Emitting Diode)

A high-brightness, flip-chip technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of side brightness loss, fluorescent glue layer affecting brightness, fluorescent glue layer thickness, etc., to achieve the effect of improving service life

Pending Publication Date: 2022-08-05
GUANGZHOU LEDTEEN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The former achieves single-sided light emission but affects the light output from the side, resulting in a loss of brightness. The latter has a relatively thick fluorescent adhesive layer, usually above 150um. Too thick a fluorescent adhesive layer also affects brightness.
Therefore, when using this light source for patch integration, the light output performance of the product is greatly reduced, and because the thicker the fluorescent adhesive layer is under the same color temperature and color region, the greater the proportion of silica gel in the fluorescent adhesive layer is. As we all know, the current market The heat resistance of the upper silica gel is limited, and the phenomenon of blackening of the fluorescent layer often occurs during use. In essence, it is the blackening of the silica gel in the fluorescent layer. Blackening of the silica gel is equivalent to failure, which greatly affects the luminous performance of the CSP flip-chip LED light source. and performance

Method used

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  • Preparation method of high-brightness CSP (Chip Scale Package) flip LED (Light Emitting Diode)
  • Preparation method of high-brightness CSP (Chip Scale Package) flip LED (Light Emitting Diode)
  • Preparation method of high-brightness CSP (Chip Scale Package) flip LED (Light Emitting Diode)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] The present embodiment provides a method for preparing a high-brightness CSP flip-chip LED, comprising the following steps:

[0040] Step 1, a number of 80mil LED flip chips are bonded and arranged on the high viscosity film 2 in a matrix manner, and then the high viscosity film is bonded on the crystal plate 1; You can choose a silicone material with an adhesive force of 150-400g / 20mm. like figure 1 shown.

[0041] In step 2, the surface of the LED flip-chip 3 on the crystal board 1 is sprayed with a spraying machine nozzle 4 at 140 degrees with a fluorescent glue 5 to form a fluorescent glue layer 6; the preparation method of the fluorescent glue 5 is as follows: YAG aluminate 10 g of salt yellow powder and green powder, 6 g of silica gel, 3 g of o-xylene, and 0.06 g of nano-scale silica are mixed uniformly, and the thickness of the formed fluorescent glue layer 6 is 30 μm. like figure 2 and 3 shown.

[0042] Step 3, inject transparent silica gel on the die pla...

Embodiment 2

[0046] This embodiment provides a preparation method of a high-brightness CSP flip-chip LED, the LED structure is as follows Figure 7 As shown, the difference from Example 1 is: 1) The mold used in the lamination process has a reticular structure formed by interlaced annular threads and vertical threads that diverge outward from the center, and then formed on the elliptical lens surface of the LED. There is a network structure f formed by interlaced annular threads and vertical threads that diverge outward from the top center. 2) The fluorescent powder in the fluorescent glue solution is nitride red powder. 3) The convex angle of the elliptical lens surface is 100°.

[0047] The luminous efficiency of the CSP flip-chip LED obtained in this example is 210lm / W.

Embodiment 3

[0049] This embodiment provides a method for preparing a high-brightness CSP flip-chip LED, and the difference from Embodiment 2 is that the convex angle of the elliptical lens surface is 170°.

[0050] The luminous efficiency of the CSP flip-chip LED obtained in this example is 220lm / W.

[0051] Figure 8 The light-emitting principle diagrams of the smooth lens of Example 1 and the helical textured lens of Examples 2 and 3 are given. Compared with the smooth lens, the helical textured lens will perform secondary light mixing on the output light, and the mixed light spot will be more uniform, and the lens will be more uniform. The spiral pattern on the surface will reduce the reflection of the light, so it will improve the light extraction to a certain extent. Compared with the ordinary lens, the brightness will increase by 2-10%. Compared with the CSP flip-chip LED product without elliptical lens surface, the brightness can be improved. up to 20 to 30%.

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Abstract

The invention provides a preparation method of a high-brightness CSP flip LED, and the method comprises the following steps: 1, enabling a plurality of LED flip chips to be bonded and arranged on a high-viscosity film in a matrix manner, and enabling the high-viscosity film to be bonded on a crystal placing plate; step 2, spraying a fluorescent glue solution on the surface of the LED flip chip on the crystal placing plate to form a fluorescent glue layer; 3, transparent silica gel is injected into the crystal placing plate on which the fluorescent glue layer is formed on the surface of the LED flip chip for compression molding treatment, so that a layer of silica gel lens is formed on each LED flip chip; and 4, each LED flip chip forming the lens is cut on the crystal placing plate and stripped from the high-viscosity film, a plurality of CSP flip LEDs are obtained, each CSP flip LED is provided with five light-emitting faces, the side portions are four rectangular faces, and the top is an oval lens face. The preparation method is simple, the high-brightness CSP flip LED capable of emitting light from five surfaces can be obtained, the brightness is improved by 10%-20% compared with that of an existing commercially available CSP flip LED, and the high-brightness CSP flip LED is high in reliability and easy to popularize.

Description

technical field [0001] The invention relates to the technical field of LED light sources, in particular to a preparation method of a high-brightness CSP flip-chip LED. Background technique [0002] With the development of technology, LED light sources are widely used in indoor lighting, stage lighting, tunnel lighting, landscape lighting and UV curing disinfection due to the advantages of high efficiency, energy saving, safety and environmental protection, reliability and durability, and long service life. The requirements for LED packaging are also different. In the LED light source, the main cost is currently the substrate and the chip. In recent years, the chip scale package (CSP)-LED light source has been introduced to the market for the automotive light market and COB integration. However, it currently hinders its further expansion of applications. In addition to the cost, the problem is that the existing CSP flip-chip LED light sources have low luminous efficacy. Tak...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/075H01L33/50H01L33/54H01L33/58
CPCH01L25/0753H01L33/507H01L33/54H01L33/502H01L33/58H01L2933/005
Inventor 郭政伟肖浩张雄
Owner GUANGZHOU LEDTEEN OPTOELECTRONICS CO LTD