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Vertical conductive electronic device including jbs diodes and process

An electronic device and conductivity type technology, applied in the field of vertical conduction electronic devices, can solve the problems of increased resistance of JBS diode 1, small current flow area, and reduced distance.

Pending Publication Date: 2022-08-05
STMICROELECTRONICS SRL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0028] Also reducing the distance between two adjacent implanted regions 13 may also result in a reduction of the electric field in the central region between two adjacent implanted regions 13
However, this also results in a smaller area of ​​the Schottky diode 2 available for the flow of current under forward bias, thus leading to an increase in the resistance of the JBS diode 1, with the result that the performance of the JBS diode 1 is degraded

Method used

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  • Vertical conductive electronic device including jbs diodes and process
  • Vertical conductive electronic device including jbs diodes and process
  • Vertical conductive electronic device including jbs diodes and process

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Embodiment Construction

[0045] figure 2 , Figure 2A and image 3 A JBS (Junction Barrier Schottky) diode 50 is shown in a Cartesian reference system XYZ, which includes a first axis X, a second axis Y, and a third axis Z.

[0046] The JBS diode 50 is formed from a plurality of base cells 54, in figure 2 Only some of them are shown in , these base cells 54 are equal to each other and are connected in parallel in the same die.

[0047] The JBS diode 50 is formed in a body 55 of wide bandgap semiconductor material, having a first surface 55A and a second surface 55B.

[0048] In particular, the body 55 is silicon carbide of one of the silicon carbide polytypes, here the 4H-SiC polytype.

[0049] In this embodiment, the body 55 includes a substrate 57 and a drift region 59 that overlies the substrate 57, eg, epitaxially grown thereon.

[0050] The substrate 57 is N-type, has a doping level such that it has a low resistivity, for example comprised between 2 m·Ωcm and 30 m·Ωcm, has a thickness, for e...

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Abstract

The invention relates to a vertical conduction electronic device device including a JBS diode and a manufacturing process process thereof. The vertical conductive electronic device is formed from a body of wide bandgap semiconductor material having a first conductivity type and a surface defining a first direction and a second direction. The body has a drift region. The electronic device includes a plurality of shallow implanted regions having a second conductivity type, extending from the surface into the drift region, and in the drift region, defining at least one superficial portion facing the surface between the plurality of shallow implanted regions. At least one deep implant region has a second conductivity type and extends a distance from the surface of the body in the drift region. A metal region extends over a surface of the body in Schottky contact with the superficial portion of the drift region.

Description

technical field [0001] The present disclosure relates to a vertical conduction electronic device including a JBS (Junction Barrier Schottky) diode and a manufacturing process thereof. In particular, wide bandgap semiconductor electronics will be introduced below. Background technique [0002] It is well known that semiconductor materials such as silicon carbide (SiC) and gallium nitride with wide bandgap (eg greater than 1.1 eV), low on-state resistance, high thermal conductivity, high operating frequency and high charge carrier saturation velocity allow obtaining Electronic devices, such as diodes and transistors, have improved performance compared to silicon electronic devices, especially for power applications, such as operation at voltages between 600V and 1300V or under specific operating conditions such as high temperatures . [0003] In particular, it is well known that such electronic devices are obtained from silicon carbide wafers of one of the silicon carbide po...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/06H01L21/329
CPCH01L29/872H01L29/0619H01L29/6606H01L29/1608H01L29/36H01L29/0623H01L29/0692
Inventor S·拉斯库纳G·贝洛基E·扎内蒂M·G·萨吉奥
Owner STMICROELECTRONICS SRL