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Method of eliminating edge effect in chemical vapor deposition of metal

A technology of chemical vapor deposition and edge effect, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as low efficiency and high cost

Inactive Publication Date: 2004-11-03
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the fact is that the inefficiency and high cost of commercial semiconductor production

Method used

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  • Method of eliminating edge effect in chemical vapor deposition of metal
  • Method of eliminating edge effect in chemical vapor deposition of metal
  • Method of eliminating edge effect in chemical vapor deposition of metal

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Experimental program
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Embodiment Construction

[0024] see figure 1 , figure 1 Shown is a pedestal 20 supporting a semiconductor substrate 22 during copper CVD and the substrate 22 to be supported. A typical submount 20 has native oxide layer 24 on top surface 26a and sides 26b. Substrate 22 has a native oxide layer 30 having a thickness of about 10 to about 20 Angstroms as its upper surface 28 . The upper layer 30 is on a TiN layer 32 on a silicon substrate 34 with a thickness of about 500 Angstroms.

[0025] Substrate 22 has an edge region 44, which is defined as the region near the edge of the substrate where reactants are depleted during subsequent copper or other metal CVD. During subsequent CVD of copper or other metals, the remainder of the substrate 22, defined as excluding the edge region 44, will not be depleted of reactants.

[0026] see figure 2 , which shows a reactor 45 for depositing copper on the surface 28 of the semiconductor substrate 22 by CVD. The reactor 45 comprises a reaction chamber 46 enclos...

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Abstract

A method of eliminating an edge effect in chemical vapor deposition of a metal such as copper on a semiconductor substrate surface. A susceptor in a reaction chamber is exposed to a plasma. A substrate contained thereon and processed by chemical vapor deposition has a uniform metal layer at edge and non-edge surfaces. A plurality of substrates may be processed before reexposing the susceptor to the plasma.

Description

technical field [0001] The present invention relates generally to the chemical vapor deposition (CVD) of metal films on semiconductor substrates, and more particularly to a method for eliminating insufficient thin deposits of materials such as copper at the edges of substrate surfaces. Background technique [0002] In forming integrated circuits (ICs), thin films containing metal and metalloid elements are often deposited on the surface of a semiconductor substrate or wafer. These films provide conductive ohmic contacts in circuits and between components of the IC. For example, a thin film of the desired metal can be applied to the exposed surface of a contact hole or via in a semiconductor substrate, the film passing through the inculpative layers of the substrate to provide a conductive material for forming insulating interlayer interconnections embolism. [0003] One well-known method of depositing thin metal films is chemical vapor deposition (CVD), in which thin films...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/02C23C16/18C23C16/44H01L21/285
CPCC23C16/4405C23C16/18H01L21/28556Y10S438/913H01L21/20
Inventor 尚塔尔·阿里纳罗纳德·贝特伦伊曼纽尔·圭多蒂
Owner TOKYO ELECTRON LTD