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Semiconductor ceramic material and electronic component using said material

A technology of ceramic materials and semiconductors, which is applied in the direction of resistors with positive temperature coefficients, ceramics, inorganic insulators, etc., and can solve problems such as the difficulty of fully withstand voltage of semiconductor ceramic materials

Inactive Publication Date: 2005-04-20
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the BaTiO 3 It is difficult for semiconducting ceramic materials to sufficiently withstand voltage, and in order to obtain high withstand voltage, it is necessary to increase the thickness of the semiconducting ceramic sheet

Method used

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  • Semiconductor ceramic material and electronic component using said material
  • Semiconductor ceramic material and electronic component using said material
  • Semiconductor ceramic material and electronic component using said material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0028] Take BaCo 3 、TiO 2 、Sm 2 o 3 , MnCO 3 and SiO 2 Mixing of raw materials into mixtures, for example into (Ba 0.998 SM 0.002 ) 1.002 TiO 3 +X·Mn+Y·SiO 2

[0029] This powdery mixture was ground in water with zirconia balls for 5 hours, followed by calcination at 1100°C for 2 hours. The mixture obtained after calcination is mixed with an organic binder, and the resulting mixture is compacted under dry conditions. 2 / N 2 The formed compact was fired in an atmosphere at a predetermined temperature, and the fired compact was reoxidized in air at a temperature of 1000° C. to produce a ceramic sample. Correct the firing temperature according to the prepared samples. 4 types of samples were obtained. By adding amount X and SiO according to Mn 2 The conventional method of controlling the PTC characteristics by using the addition amount Y of Y to obtain the sample of Comparative Example 1. The present invention passes Mn and SiO 2 The amount is limited to less and...

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Abstract

The invention discloses a semiconductor ceramic material and electronic components using it. Contains barium titanate (BaTiO 3 ) and has a positive temperature coefficient of resistance, this semiconductor ceramic material has a high withstand voltage capability. In this semiconductor ceramic material, the boundary temperature is higher than the Curie temperature by 180° C. or higher (for example, 370° C.) on the boundary between the first temperature range and the second temperature range, wherein the first temperature range is higher than the Curie temperature. temperature, and within this range the ceramic material has a positive temperature coefficient of resistance, the second temperature range is higher than the first temperature range, and within this range the ceramic material has a negative temperature coefficient of resistance.

Description

technical field [0001] The present invention relates to semiconductor ceramic materials and electronic components using it, in particular to barium titanate (BaTiO 3 ) semiconducting ceramic materials and electronic components such as thermistors using such ceramic materials. Background technique [0002] In the past, BaTiO with a positive temperature coefficient of resistance (hereinafter referred to as PTC) 3 Semiconducting ceramic materials have been widely used in PTC thermistors, for example in the degaussing of cathode ray tubes or elements in heaters. Moreover, in order to expand its application range, it is strongly required to improve the BaTiO 3 voltage resistance of semiconductor ceramic materials, and it is suggested that elements such as manganese (Mn) and calcium (Ca) be added to the ceramic material. [0003] However, the BaTiO 3 It is difficult for a semiconductive ceramic material to sufficiently withstand voltage, and in order to obtain a high withstand...

Claims

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Application Information

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IPC IPC(8): H01C7/02C04B35/468
CPCC04B35/468
Inventor 新见秀明安藤阳川本光俊児玉雅弘
Owner MURATA MFG CO LTD