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SiC/TiN superhard nano multi-layer film and manufacturing process thereof

A nano-multilayer, manufacturing process technology, applied in metal material coating process, coating, ion implantation plating and other directions, can solve problems such as multi-layer film material systems that have not yet been found

Inactive Publication Date: 2005-07-06
SHANGHAI JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

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Method used

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  • SiC/TiN superhard nano multi-layer film and manufacturing process thereof
  • SiC/TiN superhard nano multi-layer film and manufacturing process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] The process parameters are as follows: the sputtering power of TiN target is 100W, the deposition time is 25 seconds, the sputtering power of SiC target is 60W, and the deposition time is 5 seconds. The thickness of TiN layer in the obtained TiN / SiC film is about 4.3nm, and the thickness of SiC layer is about is 0.4nm, and the hardness of the multilayer film reaches the highest value of 30.1GPa.

Embodiment 2

[0015] The process parameters are as follows: the sputtering power of TiN target is 100W, the deposition time is 25 seconds, the sputtering power of SiC target is 75W, and the deposition time is 5 seconds. The thickness of the TiN layer in the obtained TiN / SiC film is about 4.3nm, and the thickness of the SiC layer is about is 0.6nm, and the hardness of the multilayer film reaches the highest value of 60.5GPa.

Embodiment 3

[0017] The process parameters are as follows: TiN target sputtering power is 100W, deposition time is 25 seconds, SiC target sputtering power is 100W, deposition time is 5 seconds, the thickness of TiN layer in the obtained TiN / SiC film is about 4.3nm, and the thickness of SiC layer is about 0.81nm, the hardness of the multilayer film is reduced to 34.4GPa.

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Abstract

A SiC / TiN ultra-hard nano-multilayer film and a manufacturing process thereof belong to the field of ceramic thin films. SiC / TiN superhard nano-multilayer film is composed of TiN layer and SiC layer alternately deposited on a metal or ceramic substrate. The thickness of the TiN layer is 4-50nm, and the thickness of the SiC layer is 0.4-0.8nm. The thickness is 2 to 4 μm. The SiC / TiN ultra-hard nano-multilayer film manufacturing process of the present invention first performs mirror polishing on the surface of the metal or ceramic substrate, and then alternately deposits TiN layers and SiC layers on the metal or ceramic substrate by double-target sputtering to prepare SiC. / TiN ultra-hard nano-multilayer film, SiC and TiN materials are provided by sputtering targets. The present invention selects two kinds of nitrides and carbides with good lattice matching as the system, so that the film has excellent mechanical properties of high hardness. Practical value, the highest hardness can reach 60.5Gpa, and the elastic modulus can reach 470GPa.

Description

technical field [0001] The invention relates to a multilayer film and a manufacturing process thereof, in particular to a SiC / TiN superhard nano-multilayer film and a manufacturing process thereof, belonging to the field of ceramic thin films. Background technique [0002] In the prior art, the vapor deposition surface plating strengthening layer of metal material tools and molds usually adopts a nitride, carbide or carbonitride monolayer film, such as TiN, TiC, Ti(CN) and the like. Among them, TiN thin film has been widely used in industrial production because of its good anti-wear and anti-friction properties; but its hardness is still not high enough, and it cannot meet the high requirements of tooling and mold working conditions in some application fields. It is a way to improve the hardness of these films to seek the film material composition system and its microstructure characteristic parameters with ultra-high hardness and ultra-high modulus. In the 1990s, the super...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/34
Inventor 李戈扬劳技军孔明戴嘉维张惠娟顾明元
Owner SHANGHAI JIAOTONG UNIV