Manufacturing method of semiconductor substrate and manufacturing method of semiconductor device
A manufacturing method and semiconductor technology, applied in the high-quality field, can solve the problems of impossible to obtain a high-quality substrate with crystal defects, complicated manufacturing process, etc.
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Embodiment 1
[0043] First, as shown in Figure 1(a), the single crystal silicon substrate 1 in the direction of the (111) crystal plane is cleaned according to a known method, and epitaxially grown on the silicon substrate 1 with a Ge concentration of 25 atoms at 520°C % and a strained SiGe film 2 with a film thickness of 300nm.
[0044] Next step, firstly, as shown in Fig. 1(b), hydrogen ion 3 with energy of 30KeV and 3×1016cm 2 The size ions are implanted into the silicon substrate 1, so the ion implantation range (Rp) reaches the side of the silicon substrate 1 from the interface between the SiGe film 2 and the silicon substrate 1, that is to say, the depth from the interface is 50nm. Ion implantation introduces microscopic defects 4 in the vicinity of Rp without destroying the crystal and leaving defects on the side of the substrate surface where the ions are implanted.
[0045] Then, as shown in FIG. 1(c), an annealing treatment is performed on the silicon substrate 1 at a temperature...
Embodiment 2
[0057]First, as shown in Figure 2(a), the single crystal in the (111) crystal plane direction is cleaned according to known methods
[0058] Silicon substrate 21a, and on the silicon substrate 21a, a single crystal silicon substrate 21b with a thickness of 5nm and a SiGe film 22 with a thickness of 300nm and a Ge concentration of 25 atomic % were epitaxially grown on the silicon substrate 21a. Here, the temperature of the deposition time was set at 520°C. Furthermore, compared to Embodiment 1 described above, in order to suppress hillocks and voids due to abnormal growth of the SiGe film, a single-crystal silicon substrate 21b is deposited. Moreover, although the silicon film is deposited on the silicon substrate in the above-described embodiment, the strained SiGe film 22 containing 25 atomic % Ge concentration can be directly epitaxially grown on the silicon substrate in the same manner as in embodiment 1, as long as it has a thickness of 300 nm thickness of.
[0059] In t...
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