Unlock instant, AI-driven research and patent intelligence for your innovation.

Thin permanent-magnet film and process for producing same

A technology for permanent magnets and manufacturing methods, which is applied in the direction of magnetic film, inductor/transformer/magnet manufacturing, manufacturing base layer, etc., can solve the problem that the residual magnetic flux density is not obtained, the value is low, and the rare earth alloy magnetic thin film metal cannot be fully controlled organizational issues

Inactive Publication Date: 2006-04-05
SUMITOMO SPECIAL METAL CO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, the aforementioned prior art suppresses the reaction of the rare-earth alloy magnetic film in direct contact with the substrate or the atmosphere, and prevents the deterioration of the magnetic film caused by such a reaction, so it cannot sufficiently control the metal content of the rare-earth alloy magnetic film. organize
Therefore, the coercivity ratio comes from the tetragonal R 2 Fe 14 The crystal magnetic anisotropy inherently possessed by compound B is low in expected value, and sufficient residual magnetic flux density cannot be obtained.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin permanent-magnet film and process for producing same
  • Thin permanent-magnet film and process for producing same
  • Thin permanent-magnet film and process for producing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] In this example, firstly, using a DC diode magnetron sputtering device, Al 2 o 3 - On a TiC ceramic substrate, several samples of refractory metal layers composed of any of Ta, Nb, Zr, and Ti layers and Nd-Fe-B alloy layers (rare earth alloy magnetic layers) were laminated alternately. In this example, the total thickness of the Nd—Fe—B alloy layers was specified to be 1000 nm (200 nm×5) for all the samples. The lamination structure and magnetic properties in each sample are shown in Table 1 below.

[0060] sample

No.

stacked structure

In-plane

Vertical film direction

B r1

(T)

h cJ

(kA / m)

B r2

(T)

h cJ

(kA / m)

1

comparative example

Substrate / Nd-Fe-B(1000nm)

0.20

263

0.61

509

2

Example

substrate /

[Ti(20nm) / Nd-Fe-B(200nm)]×5

0.25

422

0.89

844

3

...

Embodiment 2

[0068] In this example, a DC diode magnetron sputtering device was used to produce Al 2 o 3 - On a TiC ceramic substrate, a 5-layer sample in which a 20 nm Ta layer and a 200 nm Pr-Fe-B alloy layer are alternately laminated, and a sample in which only the Pr-Fe-B alloy layer is formed to a thickness of 1000 nm. For each sample, the lamination structure and magnetic properties are shown in Table 2 below.

[0069] sample

No.

stacked structure

In-plane

Vertical film direction

B r1

(T)

h cJ

(kA / m)

B r2

(T)

h cJ

(kA / m)

14

comparative example

Substrate / Pr-Fe-B(1000nm)

0.21

231

0.65

485

15

Example

substrate /

[Ta(20nm) / Pr-Fe-B(200nm)]×5

0.16

478

0.83

＞1194

[0070] Here, sample No. 15 is an example of the present invention, and sample No. 14 is a comparative example...

Embodiment 3

[0075] In this example, the DC diode sputtering method is used to fabricate the water-cooled Al 2 o 3 - On the TiC ceramic substrate, 5 layers of samples with 20nm Ta layer and 200nm Nd-Fe-B alloy layer were alternately laminated, and a sample with only 1000nm Nd-Fe-B alloy layer formed into a film. For each sample, the lamination structure and heat treatment conditions are shown in Table 3 below.

[0076] Sample No.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
melting pointaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

Refractory metal layers 2, 4, 6, 8, and 10, and rare earth alloy magnetic layers 3, 5, 7, 9, 11, and 12 are alternately deposited, so as to form a multilayer structure including four or more layers on a substrate. The refractory metal layers 2, 4, 6, 8, and 10 are formed from at least one kind of material selected from a group consisting of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, and W, and each has a thickness of not less than 5 nm nor more than 50 nm. The rare earth alloy magnetic layers 3, 5, 7, 9, 11, and 12 have tetragonal R2Fe14B (R is Nd and / or Pr) as a primary constituent phase, and each has a thickness of not less than 50 nm nor more than 500 nm.

Description

technical field [0001] The present invention relates to a permanent magnet thin film and its manufacturing method. In particular, it relates to a permanent magnet thin film suitable for use in a small motor, a micro-actuator, an element for applying an offset magnetic field to a magnetoresistive element, a magnetic recording medium, and the like. Background technique [0002] Along with progress in the miniaturization of various electric machines, the development of micromotors and microactuators using permanent magnet thin films is being promoted. The magnetic properties of the permanent magnet films dictate the size or performance of such devices. Therefore, Nd—Fe—B-based magnet materials or Sm—Co-based magnet materials with a high maximum energy product have attracted attention as materials for permanent magnet thin films, and research and development thereof have been actively conducted. Among them, the tetragonal Nd that constitutes the main phase of the Nd-Fe-B magne...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01F10/14H01F10/30C23C14/06C22C38/00C23C14/14G11B5/64G11B5/66G11B5/72G11B5/73G11B5/84H01F1/057H01F10/12H01F10/32H01F41/14H01F41/30H02K15/03
CPCG11B5/72B82Y40/00B82Y25/00H01F10/126H01F1/057H01F41/302G11B5/7325Y10S428/90G11B5/66G11B5/8404G11B5/653H01F10/3286Y10T428/1107G11B5/7368G11B5/672H01F10/14
Inventor 上原稔
Owner SUMITOMO SPECIAL METAL CO LTD