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Method for mfg. semiconductor device

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., capable of solving problems such as poor semiconductor devices

Inactive Publication Date: 2006-04-05
PANASONIC CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the silicidation reaction on the surface of the silicon substrate is prevented, which may cause defects in the semiconductor device.

Method used

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  • Method for mfg. semiconductor device
  • Method for mfg. semiconductor device
  • Method for mfg. semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] Embodiments of the semiconductor device manufacturing method of the present invention will be described below with reference to the drawings.

[0035] Test results forming the basis of the invention

[0036] In this embodiment, as the wet etching solution used for the selective etching, two solutions of a mixed solution containing hydrofluoric acid and acetic acid or a mixed solution containing hydrofluoric acid and isopropyl alcohol (IPA) are used.

[0037] FIG. 1 is a table showing etching rates and selectivity ratios of various oxide films obtained from test results for evaluating etching by these wet etching solutions. The test is carried out as follows.

[0038] On the silicon substrate, a thermal silicon oxide film (hereinafter referred to as th-SiO 2 film), NSG film by normal pressure CVD method, BPSG (3.5% boron concentration, 4.5% phosphorus concentration) film sample by normal pressure CVD method, and then, in these samples, formed NSG film, BPSG film , at ...

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PUM

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Abstract

A manufacturing method of semiconductor apparutus. On the sides of a gate electrode, layered-film sidewalls are formed which includes a first oxide film such as an NSG film or a TEOS film and a second oxide film such as a BPSG film or a PSG film. After the layered-film sidewalls are used as a mask for forming source and drain regions of a MIS transistor, the second oxide film of the sidewalls is selectively removed. At the removal, wet etching is performed with an aqueous solution containing hydrofluoric acid, and acetic acid or isopropyl alcohol. This makes etching selectivity between oxide films higher and removes only the upper second oxide film. As a result, in the formation of two types of oxide films which differ in their etching properties, the etching selectivity can be prevented from deteriorating.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device using a laminated film composed of two or more oxide films having different film qualities in a semiconductor device manufacturing process, and more specifically to selective wet etching of the laminated film. Background technique [0002] In recent years, in the ultra-large scale integrated circuit (LSI) device formed by integrating multiple components, the miniaturization of the component size has been continuously progressing based on the technical orientation of miniaturization, high density, high speed, and low power consumption. . With the miniaturization of the device size, if the thinning of the coating film constituting a part of the device and the miniaturization of each part are limited, the film reduction of the coating film and the reduction of each part can no longer be ignored in order to maintain the desired device characteristics. Unexpected changes in p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/31H01L21/311H01L21/28H01L21/306H01L21/308H01L21/316H01L21/8238H01L29/78
CPCH01L21/31111H01L21/823864H01L21/18
Inventor 和田幸久久米聪
Owner PANASONIC CORP