Apparatus and method for an integrated circuit having high Q reactive components

Abstract

In an IC packaging scheme, a multilayer substrate is composed of electrically conductive layers of interconnects, separated by insulative layers of epoxy resin or ceramic and connected by vias. Passive elements are integrated within the substrate at the definition stage during layout of the interconnects. The passives can be used to enhance the electrical performance of the active circuit die to a maximum extent allowed by the material technology used for the substrate. Material selection for the package is made to allow for the best passive integration for a given circuit design. Typical applications include power supply bypass capacitors, radio frequency tuning, and impedance matching. The incorporation of passives in the packaging substrate creates a new class of electrically tailorable packaging that can derive improved performance for any given die design over existing approaches.

Description

technical field

[0001] The present invention generally relates to packaging of semiconductor devices, and is particularly directed to the fabrication of high-Q reactive components in such packages. Background technique

[0002] The present invention relates to the structure of high-Q passive components, which are generally referred to, for example, as components used in radio frequency equipment. The difficulty with which these components are introduced in semiconductor chips is well known: the quality factor (Q) of the lumped and dispersed reactance parts is mainly dependent on the resistance of the metal, dielectric losses and parasitic reactances. The true value of the inductance and capacitance of lumped elements is greatly limited by the area available on the semiconductor chip. Similarly, distributed transmission line resonators are difficult to deploy at the desired frequency on a semiconductor chip due to space constraints. A common convention is to place the lumpe...

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