Open pipe tellurium cadmium mercury epitaxial material heat treatment method

A heat treatment method and epitaxial material technology, applied in the field of P-type heat treatment of open-tube mercury cadmium telluride epitaxial materials, can solve the degradation of PN junction performance, the large dispersion of carrier concentration of P-type materials, and the inability to large-scale and large-scale Material heat treatment and other issues to achieve the effect of maintaining surface integrity and excellent surface morphology

Inactive Publication Date: 2002-06-19
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, further studies have found that there is a certain lattice mismatch between the ZnS or CdTe capping layer used in this heat treatment method and the HgCdTe material, and this lattice mismatch will be in the epitaxial material during heat treatment. Misfit dislocations are generated on the surface, and the generation of dislocations will lead to the degradation of PN junction properties
The patent "Heat Treatment Process and Device for Hole Conducting HgCdTe Epitaxial Material" (ZL96 1 16340.2) also provides a method of using quartz ampoule P-type low-temperature heat treatment. This method can obtain P-type materials, but the disadvantage is that closed-tube type must be used The heat treatment technology cannot be used for heat treatment of large-scale and large-volume materials. In addition, the carrier concentration of the P-type material obtained by this method has a large dispersion

Method used

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  • Open pipe tellurium cadmium mercury epitaxial material heat treatment method
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  • Open pipe tellurium cadmium mercury epitaxial material heat treatment method

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Embodiment 1

[0019] 1) Production of graphite box

[0020] The present invention utilizes the characteristics of high purity, high density and easy processing of today's graphite materials. The graphite box 1 is composed of a graphite box body 101 and a graphite lid 102. The structure is as follows: figure 1 shown. There are two cavities in the graphite box, and a groove 106 in the middle connects the two cavities. One cavity is a cavity 104 for placing epitaxial materials, and its depth is slightly larger than the thickness of the sample. The other cavity is for placing HgTe powder. body 105, the depth of which is determined according to the amount of HgTe powder required to be placed, and on the side where the graphite box body and the graphite box cover are in contact, the two surfaces are polished brightly with a polishing paper with a particle size of less than 1 micron, so that they can be polished when they are in contact with each other. The sealing effect is better played, and th...

Embodiment 2

[0035] In this embodiment, the heat treatment method proposed by the present invention is implemented by using the graphite boat used in the improved push boat liquid phase epitaxy. The structure of the graphite boat is shown in figure 2 , 1-1 is the graphite boat body, 1-2 is the graphite boat cover, 1-3 is the graphite screw, 1-4 is the epitaxial material cavity, 1-5 is the HgTe powder cavity, 1-6 is the graphite slider , 1-7 are through holes. When the growth of the liquid phase epitaxy material ends, add the HgTe powder into the powder cavity 1-5, or before the growth of the epitaxial material, add the HgTe powder into the powder cavity 1-5, after the growth of the epitaxial material, by pulling The slider 1-6 makes the cavity 1-5 for placing the HgTe powder communicate with the cavity 1-4 for placing the epitaxial material through the through hole 1-7, so that the epitaxial material can be heat-treated together with the graphite boat without taking it out, thereby The c...

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Abstract

The present invention discloses an open tube HgTe source Te-Cd-Hg epitaxial material heat treatment method. The stable mercury steam pressure required for heat treatment is provided by adopting graphite box structure. Said graphite box also can be implemented by utilizing improved liquid-phase epitaxial graphite boat, and its open tube process provides a way for batch production of the part. The success rate of using said process to make hole conduction heat treatment can be up to 100%. The hole density of the material of 77K temp. can be arbitrarily regulated in the range of 5X10 to the power 15 to 5X10 to the power 16 cm (-3). At the same time, the dislocation of material surface in the course of heat treatment does not produce increment effect, and the material composition and appearance form can be better retained.

Description

technical field [0001] The invention relates to the post-processing technology of single crystal or homogeneous polycrystalline compound material with certain structure, especially the P-type heat treatment method of open-tube mercury cadmium telluride epitaxy material used for manufacturing large-scale focal plane array detectors. Background technique [0002] The P-type heat treatment technology of HgCdTe material has a long history. After the study of the solid-gas phase diagram of HgCdTe material, it was found that the concentration of mercury vacancies in the material is related to the heat treatment temperature and mercury pressure, and the relationship between them was confirmed experimentally. Correspondence between. The earliest heat treatment process for mercury cadmium telluride body materials is to place the mercury source and the sample at the two ends of a vacuum-sealed quartz ampoule, control the temperatures of the mercury source and t...

Claims

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Application Information

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IPC IPC(8): C30B33/02H01L21/324H01L21/477H01L31/00
CPCY02E10/50
Inventor 杨建荣陈新强黄根生何力
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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