Semiconductor laser light resource for projection apparatus
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
- Publication Date
- 2002-07-17
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
Technical field:
[0001] The invention relates to a semiconductor laser light source for a projection device, in particular to a laser light source with watt-level power, uniform intensity distribution, and near-parallel multi-purpose laser beams required by the laser projection device. It is mainly suitable for laser projection, laser lithography, printing and measurement devices. Background technique:
[0002] For high-resolution (0.1μm resolution) laser lithography, printing, laser projection and measurement, etc., the requirements for semiconductor laser diodes (hereinafter referred to as LD) are to be able to emit high power (on average hundreds of milliwatts to several watts) and Nearly parallel (0.5-5 mrad) high-quality light beams with uniform intensity distribution (non-uniformity equal to less than 5%), and generally require wavelength λ<980nm, such as 780nm, or shorter wavelengths. In the above wavelength range, in the prior art, the output optical power of the...