Semiconductor laser light resource for projection apparatus

A technology of projection device and laser light source, which is applied in the field of laser light source, can solve the problems of high cost and complex structure, and achieve the effects of convenient and reliable operation, uniform intensity distribution, simple, compact and reasonable structure
CN1359175AInactive Publication Date: 2002-07-17SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Publication Date
2002-07-17
Estimated Expiration
Not applicable · inactive patent

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Abstract

The semiconductor laser light source mainly is applicable to laser projection, alser etching, printing and measurement equipments, and is characterized by that its semiconductor laser component is coupled with monomode fibre to output a laser beam, said laser beam is passed through a collimating element and collimated, and beam-splitted to obtain two beans of light, one beam of light can be directly outputted, its beam orifice is smaller, can be provided for use, another beam of light is expanded by means of beam-expanding element, then a parallel beam with larger beam orifice can be outputted for use. Said invention is simple in structure, its coupling efficiency is about 70%.
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Description

Technical field:

[0001] The invention relates to a semiconductor laser light source for a projection device, in particular to a laser light source with watt-level power, uniform intensity distribution, and near-parallel multi-purpose laser beams required by the laser projection device. It is mainly suitable for laser projection, laser lithography, printing and measurement devices. Background technique:

[0002] For high-resolution (0.1μm resolution) laser lithography, printing, laser projection and measurement, etc., the requirements for semiconductor laser diodes (hereinafter referred to as LD) are to be able to emit high power (on average hundreds of milliwatts to several watts) and Nearly parallel (0.5-5 mrad) high-quality light beams with uniform intensity distribution (non-uniformity equal to less than 5%), and generally require wavelength λ<980nm, such as 780nm, or shorter wavelengths. In the above wavelength range, in the prior art, the output optical power of the...

Claims

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