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Preparation method of cadmium antimonide powder

A technology of cadmium telluride and powder, which is applied in the field of photoelectric material preparation technology, can solve the problems of staff and environmental pollution, high temperature, uneven heating of hot rods, etc., and achieve the effect of improving purity and requiring low chemical reaction temperature

Inactive Publication Date: 2002-11-20
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method requires a higher temperature, the heating of the hot rod is not uniform enough, and the reaction is not sufficient
Other literature reports are the preparation method of cadmium telluride film, that is, two independent crucibles are used to evaporate tellurium and cadmium respectively, and then react on a heated substrate to form a CdTe film. This method is a method for film preparation. It is Direct use of monomer powders of tellurium and cadmium, in the production process, on the one hand, it is difficult to accurately control the evaporation of tellurium and cadmium; Many, easy to cause pollution and damage to the staff and the environment

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0007] Example 1, the cadmium powder and the tellurium powder are mixed and proportioned according to the weight ratio of 1:1.14, and ground and stirred to make the cadmium powder and the tellurium powder mix uniformly; the mixture of the ground and mixed cadmium powder and the tellurium powder In a vacuum crucible with a heating resistance wire wound outside; the vacuum in the crucible vacuum chamber is pumped to 1×10 -2 At this time, the crucible is heated, and when the heating temperature is 160°C, the cadmium powder and tellurium powder in the crucible can undergo a chemical reaction to generate CdTe material; the reaction product CdTe of the cadmium powder and tellurium powder is ground again, fully Mixing; place the ground CdTe material in a vacuum annealing furnace for annealing, the annealing temperature is controlled at 450° C., and the annealing time is 1 hour to obtain CdTe powder.

Embodiment 2

[0008] Example 2, cadmium powder and tellurium powder are mixed and proportioned according to a weight ratio of 1:1.15, and ground and stirred to make the cadmium powder and tellurium powder mix evenly; the mixture of ground and mixed cadmium powder and tellurium powder is placed in In a vacuum crucible with a heating resistance wire wound outside; the vacuum in the crucible vacuum chamber is pumped to 1×10 -1 At this time, the crucible is heated, and when the heating temperature is 125°C, the cadmium powder and tellurium powder in the crucible can undergo a chemical reaction to generate CdTe material; the reaction product CdTe of the cadmium powder and tellurium powder is ground again, fully Mixing; place the ground CdTe material in a vacuum annealing furnace for annealing, the annealing temperature is controlled at 500° C., and the annealing time is 1.2 hours to obtain CdTe powder.

Embodiment 3

[0009] Example 3, cadmium powder and tellurium powder are mixed and proportioned according to a weight ratio of 1:1.16, and ground and stirred to make the cadmium powder and tellurium powder mix evenly; the mixture of cadmium powder and tellurium powder after grinding and mixing is placed in In a vacuum crucible with a heating resistance wire wound outside; the vacuum in the crucible vacuum chamber is pumped to 1×10 -2 At this time, the crucible is heated, and when the heating temperature is 132°C, the cadmium powder and tellurium powder in the crucible can undergo a chemical reaction to generate a CdTe material; the reaction product CdTe of the cadmium powder and tellurium powder is ground again, fully Mixing; placing the ground CdTe material in a vacuum annealing furnace for annealing, the annealing temperature is controlled at 470° C., and the annealing time is 1.5 hours to obtain CdTe powder.

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Abstract

The preparation method of cadmium telluride powder includes the following steps: firstly, mixing tellurium powder and cadmium powder according to chemical mixing ratio, grinding and stirring mixed material, placing the mixed material in the crucible under the condition of vacuum, heating to make the tellurium powder and cadmium powder produce chemical combination reaction to form cadmium telluride material, further grinding the obtained cadmium telluride material and mixing it further, and placing the cadmium telluride material in heating furnace to make annealing treatment so as to obtain the invented product.

Description

1. Technical field [0001] The invention belongs to the field of photoelectric material preparation technology, in particular to a preparation method of cadmium telluride powder. 2. Background technology [0002] According to new research, only Japanese patents are related to the content of the present invention. The specific method is to insert a hot rod into the mixed powder of tellurium and cadmium and heat it to 500 ° C to form it. This method requires a higher temperature, the heating of the hot rod is not uniform enough, and the reaction is not sufficient enough. Other literature reports are the preparation method of cadmium telluride film, that is, two independent crucibles are used to evaporate tellurium and cadmium respectively, and then react on a heated substrate to form a CdTe film. This method is a method for film preparation. It is Direct use of monomer powders of tellurium and cadmium, in the production process, on the one hand, it is difficult to accurately c...

Claims

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Application Information

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IPC IPC(8): C01B19/00C01B19/04
Inventor 吴洪才
Owner XI AN JIAOTONG UNIV
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