Unlock instant, AI-driven research and patent intelligence for your innovation.

Multistage amplifier

A multi-stage amplifier and final-stage amplifier technology, applied in the direction of amplifiers, improving amplifiers to improve efficiency, improving amplifiers to reduce nonlinear distortion, etc., can solve the problem of reducing the gain of distortion compensation circuit 2, and cannot obtain large distortion compensation effects problem, to achieve the effect of large distortion compensation and improve efficiency

Inactive Publication Date: 2002-12-11
MITSUBISHI ELECTRIC CORP
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] Since the conventional multi-stage amplifier is configured as above, there is a problem that the distortion compensation circuit 2 is enlarged due to the attenuator included, and the gain of the distortion compensation circuit 2 is also reduced.
In addition, since only the phase characteristic is improved as distortion, there is a problem that a large distortion compensation effect including the gain characteristic cannot be obtained.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multistage amplifier
  • Multistage amplifier
  • Multistage amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] image 3 is a configuration diagram showing a multi-stage amplifier according to Embodiment 1 of the present invention. In the figure, 11 is an input terminal, 12 is a first-stage amplifier composed of a gate bias circuit, a drain bias circuit, a matching circuit, etc., in addition to an amplifying element such as a GaAsFET or a HEMT (high electron mobility transistor), and 13 Is the terminal between the first stage amplifier 12 and the second stage amplifier 14, 14 is the same second stage amplifier as the first stage amplifier 12, 15 is the terminal between the second stage amplifier 14 and the final stage amplifier 16, 16 It is the same final stage amplifier as the first stage amplifier 12 .

[0035] Wherein, as the bias condition of the first-stage amplifier 12, the no-load current Ido is set to be less than one-tenth of the saturation current Idss.

[0036] Second, explain its working.

[0037] Figure 4 It is an explanatory diagram showing the dependence of th...

Embodiment 2

[0062] In Embodiment 1 above, there is no mention of the gate width Wg1 of the transistor of the first-stage amplifier 12 , but Wg1 can be set as follows using the relationship with the gate width Wg3 of the transistor of the final-stage amplifier 16 .

[0063] Wg1>2.4×Wg3 / (GainGain3)

[0064] The details are as follows.

[0065] The working level of the first-stage amplifier 12 whose bias condition is set as Ido<0.1Idss is the same as the usual situation, and compared with the working level of the final-stage amplifier 16 in the same way as the usual situation, it is set to increase by 3dB left and right compensation levels.

[0066] However, when the bias condition is set to Ido0.75Idss, it is necessary to use a large gate of about 1dB compared with the case of normal bias conditions. extremely wide transistors.

[0067] When the gate width of the transistor of the final-stage amplifier 16 is denoted as Wg3, since the gain of the second-stage amplifier 14 and subsequent...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The bias condition of at least one of the amplifiers other than the final stage is set according to the relationship between the no-load current and the saturation current.

Description

technical field [0001] The invention relates to a quasi-linear multi-stage amplifier used in satellite communication, terrestrial microwave communication and mobile communication and meeting distortion technical specifications. Background technique [0002] Generally, multi-stage amplifiers used in satellite communications, terrestrial microwave communications, and mobile communications require low distortion due to the use of digital modulation or multi-carrier co-amplification. [0003] In addition, at the same time, high efficiency and low power consumption are required because amplifiers are among the devices that consume the most power in wireless devices. For this reason, it is necessary to improve the distortion characteristics of the amplifier by using a distortion compensation circuit so as to be able to operate near the saturation region, thereby achieving high efficiency. [0004] FIG. 1 is a configuration diagram showing, for example, a conventional multi-stage ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/02H03F1/30H03F1/32H03F3/193H03F3/60
CPCH03F1/0261H03F1/30H03F1/3276H03F3/193H03F3/1935H03F3/604
Inventor 森一富新庄真太郎池田幸夫
Owner MITSUBISHI ELECTRIC CORP