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Switch component, display device, luminous device and semiconductor device

A technology of switching elements and display devices, applied in semiconductor devices, electrical components, identification devices, etc., can solve problems such as complicated connection and difficulty in reducing the number of TFTs, and achieve the effect of suppressing the reduction of OLED brightness

Inactive Publication Date: 2003-04-23
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In particular, the number of TFTs formed in each pixel is generally large, and their connections are complicated. Compared with a liquid crystal display device in which nothing is required other than a simple voltage signal writing switch, for active In the case of matrix light-emitting devices, it is difficult to reduce the number of TFTs

Method used

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  • Switch component, display device, luminous device and semiconductor device
  • Switch component, display device, luminous device and semiconductor device
  • Switch component, display device, luminous device and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0053] use Figures 1A-1C The switching element of the present invention is explained. Figure 1A is the upper surface diagram of the transistor of the present invention, Figure 1B Corresponds to along Figure 1A A cross-sectional view of the line A-A' drawn at the midpoint, Figure 1C Corresponding to the graph edge Figure 1A A cross-sectional view of the line B-B' drawn at the midpoint.

[0054] The transistor of the present invention has an active layer 101 , a gate insulating film 102 connected to the active layer 101 , and a gate 103 connected to the gate insulating film 102 . The active layer 101 has a channel formation region 104 and impurity regions 105, 106, and 107 in which impurities that cause conductivity are added. The gate electrode 103 and the channel formation region 104 overlap each other sandwiching the gate insulating film.

[0055] Impurity regions 105, 106, and 107 are connected to channel formation region 104, respectively. Note that, in Embodim...

Embodiment approach 2

[0061] figure 2 A structural diagram of the OLED screen of the present invention is shown. Reference numeral 200 denotes a pixel portion, and a plurality of pixels 201 are formed in a matrix shape. In addition, reference numeral 202 denotes a signal line driving circuit, reference numeral 203 denotes a first scanning line driving circuit, and reference numeral 204 denotes a second scanning line driving circuit.

[0062] Note that although figure 2 The signal line driver circuit 202, the first scan line driver circuit 203, and the second scan line driver circuit 204 are formed on the same substrate as the pixel portion 200, but the present invention is not limited to this structure. The signal line driver circuit 202, the first scan line driver circuit 203, and the second scan line driver circuit 204 may also be formed on a different substrate from the pixel portion 200 and connected to the pixel portion 200 through connectors such as FPC or the like. Furthermore, despite ...

Embodiment approach 3

[0103] A case where the video signal is an analog signal was explained in Embodiment Mode 2, but driving can also be performed by using a digital video signal.

[0104] In the case of the time gray scale driving method using a digital video signal (digital driving method), one image can be displayed by repeatedly appearing a writing period Ta and a display period Td in one frame period.

[0105] For example, in the case of displaying an image using an n-bit video signal, at least n write-in periods and n display periods must be formed in one frame period. The n writing periods Ta1-Tan and n display periods Td1-Tdn correspond to each bit of the video signal.

[0106] After the writing period Tam (where m is any integer from 1-n), a display period corresponding to the same number of digits occurs, in this case Tdm. The writing period Ta and the display period Td are collectively referred to as a subframe period SF. A subframe period having a writing period Tam and a display pe...

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Abstract

A switching element is provided, which is capable of short-circuiting or opening three or more nodes simultaneously, and in which the surface area occupied on a substrate can be reduced. The switching element of the present invention has an active layer, an insulating film contacting the active layer, a gate electrode contacting the insulating film, and three or more connection electrodes. The active layer has at least one channel forming region and three or more impurity doped regions, and the connection electrodes are each connected to a different impurity region. An impurity region contacting an arbitrary connection electrode contacts only one of the channel forming regions.

Description

field of invention [0001] The present invention relates to a semiconductor device formed using a semiconductor thin film, the device including a switching element. The present invention also relates to an OLED panel in which a switching element and an organic light emitting diode (OLED) formed on a substrate are encapsulated between the substrate and the cover portion. In addition, the present invention also relates to an OLED module, wherein an IC is fixed on the OLED screen. Note that in this specification, both the OLED panel and the OLED module are generally referred to as light emitting devices. Background technique [0002] In recent years, the technology of forming thin film transistors (hereinafter referred to as TFTs) on substrates has been greatly improved, and the application of TFTs to active matrix type display devices has been realized. In an active matrix type display device, a TFT is provided in each pixel as a switching element, and a video signal is seque...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786G09G3/32H01L27/32
CPCG09G2300/0842G09G2300/0861G09G3/325H01L27/3244G09G2310/0248G09G3/3283H10K59/12H01L29/786
Inventor 犬饲和隆
Owner SEMICON ENERGY LAB CO LTD