Dry method photoresist removing technology used after Z3 MS etching

Abstract

The present invention that belongs to the manufacture process field of the semiconductor integrated circuit in particular relates to the dry method photoresist removing process after the process of Z3MS etching. The present invention employs N2 / O2 dry method photoresist removing process and adjusts the optimizes three major parameter comprising N2, O2 and bias-voltage RF power in order to find a new process. The present invention has a stable quality and fits for a large production line.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuit manufacturing technology, and in particular relates to a dry deglue technology after Z3MS etching. Background technique [0002] With the continuous development of IC technology, the size of devices is getting smaller and smaller, and the influence of interconnection RC delay on device turn-on speed is increasing, far exceeding the influence of gate delay. So reducing the RC interconnection delay becomes the focus of people's attention. In 1997, the IC industry began to use Cu with low resistivity instead of Al with high resistivity to reduce the interconnection resistance and apply it to the process of 0.22μm and below (although Cu is one of the metals that people are reluctant to introduce into the semiconductor production process, The main reason is that Cu will diffuse quickly in the silicon wafer and silicon dioxide medium, and the performance of the device will be u...

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to propose a new dry deglue process after Z3MS etching, so that the increase of the dielectric constant can be limited, and the impact on the etched groove wall and hole wall (such as the groove wall) can be solved. and the bending of the hole wall, etc.), the accuracy and repeatability of the groove and hole dimensions, etc.