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Test method for polycrystalline silicon solar battery converting efficiency

A solar cell and conversion efficiency technology, which is applied in transmittance measurement, spectrum investigation, etc., can solve the problem of not being able to obtain the microscopic parameters of solar cells

Inactive Publication Date: 2003-06-18
SHANGHAI JIAO TONG UNIV
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Problems solved by technology

It should be pointed out that the maximum output power obtained by this test method is related to the selection of the optimal operating voltage, the optimal operating current, and the length of the measurement time, so the obtained photoelectric conversion efficiency has certain uncertainties. Special electrode leads, and can only get macroscopic parameters such as current and voltage, but not microscopic parameters of the solar cell itself, such as band tail energy, interface defect concentration, interface charge density, coherence length and other parameters, but the latter is useful for improving the process It has direct guiding significance to improve the conversion efficiency of solar cells

Method used

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Embodiment Construction

[0012] A Fourier infrared spectrometer produced by Nicholas Company of the United States was used to measure the normal temperature transmission spectrum of polysilicon samples in the range from infrared to visible light. Test three solar cell samples made of three P-type polycrystalline silicon wafers prepared by different origins and different methods: sample S1, prepared by casting method; sample S2, prepared by directional solidification method; sample S3, prepared by casting method . The following process is used to make polycrystalline silicon wafers into solar cells: first, the surface of silicon wafers is etched and textured with acid solution, and then treated with POCl 3 After diffusion, the electrodes are made by screen printing technology, and finally SiN is deposited on the surface by particle beam enhanced chemical vapor deposition (PECVD) in order to passivate the surface and body and reduce the reflection of incident light on the surface of polycrystalline sili...

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Abstract

A method for measuring the transfer efficiency of the polysilicon solar cell belongs to the field of application of semi-conductive materials. The steps of the invention are: measuring the transmitting spectrum of the polysilicon solar cell in the range from IR to visible light wave band; fitting the test result using the theoretical formula of transmission index to obtain physical parameters such as band tail energy of the polysilicon solar cell; measuring the transfer efficiency * of the polysilicon solar cell in experiment and combining it with the band tail energy EU of the different sample of the polysilicon solar cell to obtain linear relationship between the two. The present invention can obtain directly the transfer efficiency of the polysilicon solar cell without making measuring wirings and obtain reliable micro parameters of the polysilicon solar cell to improve the process.

Description

technical field [0001] The invention relates to a method for testing the conversion efficiency of a solar cell, in particular to a method for testing the conversion efficiency of a polycrystalline silicon solar cell based on a transmission spectrum, and belongs to the field of semiconductor material applications. Background technique [0002] In the world's energy transfer, solar cell power generation is in a prominent position. Two things must be done for the wide application of solar photovoltaic power generation systems: 1. Improve the conversion efficiency of solar cells themselves, so research and testing of the conversion efficiency of solar cells themselves is a research field worthy of attention; 2. Reduce the manufacturing cost of solar cells , researchers in the field have pointed out that the use of lower-quality polysilicon semiconductors combined with rapid thermal processing and simplified screen printing process can greatly reduce the production cost of solar ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J3/28G01N21/59
Inventor 沈文忠孙坚华陈静杨海锋孟凡英
Owner SHANGHAI JIAO TONG UNIV
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