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Groove component isolation structure

A component separation and groove type technology, which is applied in the manufacture of electrical components, semiconductor/solid-state devices, circuits, etc., can solve problems such as adverse effects on circuit work and difficulties in controlling the threshold voltage of transistors, and achieve the effects of improving manufacturing yield and preventing short circuits

Inactive Publication Date: 2003-07-16
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially along with the development of the degree of integration of semiconductor elements, the narrower the width of the active region 23 (the interval between the groove and the groove), the more significant the impact of the reverse narrow channel effect, it is very difficult to control the threshold voltage of the transistor, and adversely affect the operation of the circuit

Method used

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Experimental program
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Embodiment 1

[0067] FIG. 1 shows a cross-sectional view of the manufacturing process of the trench-type component separation structure of Embodiment 1 of the present invention.

[0068] First, as shown in FIG. 1(a), on the substrate 1, a silicon oxide film of about 5 to 30 nm obtained by thermal oxidation, that is, the lower layer oxide film 2, and a polysilicon film 5 of about 100 to 300 nm are sequentially stacked. As the non-single crystal silicon film, the polysilicon film 5 and the lower layer oxide film 2 in the element isolation formation region are etched by anisotropic etching, and further, by etching the substrate 1 to a depth of about 100 to 500 nm, the substrate 1 is etched. A groove 13 is formed in the bottom.

[0069] Thus, groove 13 can be formed from the surface of polysilicon film 5 to silicon substrate 1 so that polysilicon film 5 has side wall portion 12 continuous with the side wall of the groove of silicon substrate 1 .

[0070] In addition, as the non-single crystal ...

Embodiment 2

[0082] FIG. 2 shows a cross-sectional view of the manufacturing process of such a groove-shaped element separation structure according to Embodiment 2 of the present invention.

[0083] First, as shown in FIG. 2(a), on a substrate 1, a lower layer oxide film 2 composed of a silicon oxide film obtained by thermal oxidation with a film thickness of about 5 to 30 nm, and a film of about 30 to 100 nm are sequentially stacked. After the thick polysilicon film 5 and silicon nitride film 3 with a film thickness of about 100 to 300 nm, use anisotropic etching to open the silicon nitride film 3, polysilicon film 5, and lower oxide film 2 in the element isolation formation area, and then Grooves 13 are formed in the substrate by etching the substrate 1 to a depth of about 100 to 500 nm.

[0084] Next, as shown in FIG. 2(b), a thermally oxidized film 10 of about 5 to 50 mm is formed inside the trench by a thermal oxidation method. In such a process, the side wall portion 12 of the polys...

Embodiment 3

[0092] FIG. 3 shows a cross-sectional view of the manufacturing process of the trench-type element separation structure according to Embodiment 3 of the present invention.

[0093] When the width of the groove is narrowed along with the miniaturization of the device, the problem is that a seam as shown in FIG. 14 will occur. However, the third embodiment prevents such a seam. .

[0094] That is, when embedding the buried oxide film 11 by the conventional method shown in FIG. 13, if the aspect ratio of the groove becomes large, the embedding will be incomplete, and a seam 40 will occur inside the groove as shown in FIG. 14(a). . In FIG. 14, 1 denotes a substrate, 2 denotes a thermal oxide film, and 3 denotes a silicon nitride film.

[0095] As shown in Fig. 14 (b), (c), in the structure that has such seam 40, when removing silicon oxide film 2 with hydrofluoric acid, seam will be further enlarged, and in next step , the wiring material formed on the upper part of the groove ...

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Abstract

A groove component isolation structure, in which a embedded oxide film is embeded by a thermal oxide film in a groove forming a silicon substrate, is characterized in that: the whole devices on the upper surface of the embedded oxide film is on top of the silicon substrate; the thermal oxide film includes: a first thermal oxide film part formed on top of the silicon substrate, and a second thermal oxide film part for covering the groove under the silicon substrate and connecting with the first thermal oxide film part at the height of the silicon substrate surface; the first and second thermal oxide film parts, in order that the film thickness, in the direction vertical to the groove wall, of the part contacting with each other at the hieght of the silicon substrate surface is most thickest, respectively have a part extended outsides from the part contacting with each other at the hieght of the silicon substrate surface.

Description

[0001] This application is a divisional application with application number 98105361.0. The application date of the parent application is March 2, 1998. The earlier application numbers are JP97-93600 and JP97-192269, and the earlier application dates are April 11, 1997. and July 17, 1997. technical field [0002] The present invention relates to a manufacturing method of a trench-type component isolation structure used in semiconductor integrated circuits and a trench-type component. Background technique [0003] In semiconductor integrated circuits, in order to eliminate the electrical interference between components during operation, control each component completely independently, and separate components between components, especially the groove-type component separation structure is a structure filled with insulators inside the groove, almost "Bird beak" (bird beak) does not occur, so it is an indispensable element isolation structure in realizing the miniaturization of ...

Claims

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Application Information

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IPC IPC(8): H01L21/76H01L21/762
CPCH01L21/76232H01L21/76
Inventor 堀田胜之黑井隆酒井舞子
Owner RENESAS ELECTRONICS CORP
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