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Making process of double-layered photoresist for semiconductor manufacture

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, photosensitive materials for optomechanical equipment, optics, etc., to achieve the effect of reducing thickness

Inactive Publication Date: 2004-01-21
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method also has the disadvantages mentioned above

Method used

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  • Making process of double-layered photoresist for semiconductor manufacture
  • Making process of double-layered photoresist for semiconductor manufacture
  • Making process of double-layered photoresist for semiconductor manufacture

Examples

Experimental program
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Embodiment Construction

[0021] Figure 1A to Figure 1F A double-layer photoresist process for semiconductor manufacturing according to an embodiment of the present invention is shown.

[0022] Such as Figure 1A As shown, a layer 102 to be etched is firstly provided on a substrate 100 . The substrate 100 referred to herein includes some semiconductor devices, such as transistors formed therein, which are not shown in the figure for simplification of the figure. Next, a bottom photoresist layer (this photoresist layer is made of silicon-containing material, so it is called bottom silicon-containing photoresist layer) 104 is covered on the layer to be etched 102, and its thickness is about 5000˜15000 angstroms (Å). Afterwards, the bottom silicon-containing photoresist layer 104 is hard baked at a temperature of about 120-180° C.

[0023] Then as Figure 1B As shown, the bottom silicon-containing photoresist layer 104 is processed to form a silicon oxide layer 106 on its surface. The treatment metho...

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Abstract

The making process of double-layered photoresist for semiconductor manufacture includes providing one layer to be etched on the substrate; covering with one layer of photoresist with silicon in the bottom; stoving the layer of photoresist with silicon in the bottom; processing the layer of photoresist with silicon in the bottom to form one silica layer on the surface; covering with one top layer of photoresist and stoving the layer; exposing and developing the top photoresist layer to form pattern; and transferring the pattern to the silica layer and the photoresist layer with silicon in the bottom.

Description

technical field [0001] The present invention relates to a method of fabricating integrated circuits and other electronic devices. In particular, it refers to a double-layer photoresist process that is an improved photoresist patterning process, which can be used in the manufacture of integrated circuits and other electronic devices. Background technique [0002] With the improvement of integration and function of electronic devices, the wire structure becomes more and more complex and multi-layered. When manufacturing semiconductor devices with higher integration and more functions, it is necessary to use argon fluoride excimer laser (ArF excimer laser) and deep ultraviolet light (deep ultraviolet; DUV) or even extremely short ultraviolet light (extreme ultraviolet; EUV) as the exposure light source, the wavelength used tends to be shorter and shorter. However, the use of short-wavelength light sources will cause some problems, including the transmittance of the photoresis...

Claims

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Application Information

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IPC IPC(8): G03F7/075G03F7/09H01L21/027H01L21/033H01L21/3213
CPCH01L21/0332H01L21/32139H01L21/0271G03F7/0752G03F7/094H01L21/0274
Inventor 丁坤山
Owner MACRONIX INT CO LTD
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