Reluctance type random access memory circuit

Abstract

A magnetic reluctance type random access memory circuit comprising, a magnetic resistance memory unit having stationary magnetic axis layer and a free magnetic axis layer, and an insulation layer arranged between the stationary magnetic axis layer and the free magnetic axis layer, a bit line coupled directly to the free magnetic axis layer for providing reading current flow during reading movement, and a first switching device and a second switching device coupled between the stationary magnetic axis layer and the programming line, each having a control valve.

Description

technical field [0001] The invention relates to a storage array, in particular to a storage array of a magnetoresistive random access memory. Background technique [0002] Magnetoresistive Random Access Memory (Magnetic Random Access Memory, hereinafter referred to as MRAM) is a metal magnetic material whose radiation resistance is much higher than that of semiconductor materials, and belongs to Non-volatile Random Access Memory (Non-volatile Random Access Memory) ), when the computer is powered off or shut down, it can still maintain storage. [0003] MRAM uses magnetoresistance characteristics to store and record information, and has low energy consumption, non-volatile, and permanent characteristics. The basic principle of its operation is the same as that of storing data on a hard disk. The data is based on the direction of the magnetism and stored as 0 or 1. The stored data is permanent and will not be changed until it is affected by an external magnetic field. [000...

AI Technical Summary

Problems solved by technology

[0012] That is, if the magnetic field supplied by the data line 16A is too large, although the MRAM cell 10A can write data, other MRAM cells may also be written data, resulting in a programming disturbance.

And when the magnetic field supplied by the data line 16A is too small, the effect of writing data to a specific MRAM unit cannot be achieved.

[0013] However, if the currents of the bit lines and data lines must be controlled so precisely, when there is external magnetic field interference, or the external environment changes (such as temperature, humidity, etc.), it will inevitably cause programming errors, which shows that traditional methods need precise control. The MRAM mode of programming current has the disadvantage of poor reliability

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