Method for changing inclination angle of hydride gas phase transverse epitaxy GaN film

Abstract

The invention is a technique and method to change and eliminate crystal surface included angle by adding HCl during the course of transversely extending film GaN by HVPE method. It directly adds HCl to the surface of a substrate, by the corrosion by HCl to GaN, etc, makes local V / III ratio change, so as to change the included angle and improve surface feature and quality of the film, where the flux of HCl is 4-10sccm. Compared with other methods, it does not introduce extra impurities, and this is a main technical characteristic. In addition, to introduce HCl into growth region can change local reaction balance and also improve the surface feature and quality of the film GaN.

Description

1. Technical field [0001] The invention relates to a technology and a method for changing and eliminating the tilt angle generated in the growth process by directly adding HCl in the process of lateral epitaxial growth of a GaN thin film by using the hydride vapor phase epitaxy (HVPE) technology. 2. Technical background [0002] Group III-V nitride materials (also known as GaN-based materials), mainly composed of GaN, InGaN, and AlGaN alloy materials, are new semiconductor materials that have attracted much attention in the world in recent years. Their superior performance makes them a short-wavelength semiconductor optoelectronic The most preferred material for devices and high-frequency, high-voltage, high-temperature microelectronic devices. [0003] Due to the limitations of the physical properties of GaN itself, the growth of GaN bulk single crystal is very difficult and has not been put into practical use. In the early days, people mainly used the hydride vapor phase ...

AI Technical Summary

Problems solved by technology

The outstanding disadvantage of this method is that the dislocation density in the GaN epitaxial layer is very high, generally up to 10 10 cm -2 about

Images