Upper thermal field used for eight inch adulterated arsenic vertical gulling monocrystal manufacture

A silicon single crystal, thermal field technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem of component supercooling, and achieve the effect of increasing the temperature gradient and strengthening the cooling effect.

Active Publication Date: 2004-12-22
金瑞泓科技(衢州)有限公司
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  • Abstract
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Problems solved by technology

[0013] (2) component supercooling phenomenon

Method used

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  • Upper thermal field used for eight inch adulterated arsenic vertical gulling monocrystal manufacture
  • Upper thermal field used for eight inch adulterated arsenic vertical gulling monocrystal manufacture
  • Upper thermal field used for eight inch adulterated arsenic vertical gulling monocrystal manufacture

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Embodiment Construction

[0027] this invention( Figure 4 The upper part of the melt with hatching) and the ordinary thermal field ( figure 2 ) The main difference is that the novel heat field of the present invention has increased the heat field top that is made up of upper cover plate 22, support cylinder 17, inner air guide cylinder 19, heat preservation cover 23, and these parts are all made by high-purity graphite. The support cylinder 17 and the upper cover plate 18 mainly play the role of support and heat preservation, and the inner air guide cylinder 19 and the heat preservation cover 23 mainly play the role of heat preservation and adjustment of the upper flow field of the melt. The double-layer structure composed of the inner air guide cylinder 19 and the heat preservation cover 23 further enhances the thermal insulation effect of the upper part of the melt, and increases the temperature gradient of the growth interface of the single crystal drawn by a thermal field greater than or equal to...

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Abstract

A top heat field used for preparing 8-inch heavyly doped monosilicon by straight pulling up is composed of a hollow conic insulating cover, internal air guiding barrel in said insulating cover, upper cover plate connected to top of said insulating cover. It can enhance the scavenge action of the airflow on the surface of molten body for removing the fine particles from the surface.

Description

technical field [0001] The invention relates to an upper thermal field for the manufacture of eight-inch heavily arsenic-doped Czochralski silicon single crystal Background technique [0002] Heavily doped Czochralski silicon single crystals are used to produce epitaxial substrates. Growing a high-resistivity epitaxial layer on a low-resistivity heavily doped substrate can solve the contradiction between the high breakdown voltage of bipolar transistors (requiring the use of high-resistivity silicon wafers) and low collector resistance, and can reduce bipolar transistors. The power consumption of the pole transistor is improved, and the response effect of its high-frequency signal is improved. Growing a high-resistivity silicon epitaxial layer on a low-resistivity heavily doped silicon substrate can also be used to solve the latch-up problem of CMOS components. [0003] Device manufacturing requires low substrate resistivity, but the concentration of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/14C30B29/06
Inventor 李立本田达晰马向阳刘培东杨德仁
Owner 金瑞泓科技(衢州)有限公司
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