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Method of processing quartz member for plasma processing device, quartz member for plasma processing device, and plasma processing device having quartz member for plasma processing device mounted ther

A plasma and treatment device technology, which is applied in the process of producing decorative surface effects, semiconductor/solid-state device manufacturing, decorative arts, etc., and can solve the problems of contaminating the surface of the object to be treated and reducing the yield of finished products.

Inactive Publication Date: 2004-12-22
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] And, as shown in Fig. 5 (d), deposit 57 peels off the surface of quartz part 51, just causes debris 61, exists the danger of contaminating the surface of the object to be processed, and reduces yield

Method used

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  • Method of processing quartz member for plasma processing device, quartz member for plasma processing device, and plasma processing device having quartz member for plasma processing device mounted ther
  • Method of processing quartz member for plasma processing device, quartz member for plasma processing device, and plasma processing device having quartz member for plasma processing device mounted ther
  • Method of processing quartz member for plasma processing device, quartz member for plasma processing device, and plasma processing device having quartz member for plasma processing device mounted ther

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no. 1 approach

[0023] The configuration of a plasma processing apparatus according to a first embodiment of the present invention will be described with reference to FIGS. 1 and 2 . FIG. 1 is a schematic cross-sectional view showing a plasma processing apparatus according to a first embodiment of the present invention, and FIG. 2 is a diagram showing the shape of a quartz member according to this embodiment. Fig. 2 (a) is the plane view of focusing ring 19, Fig. 2 (b) is the sectional view of AA' of Fig. 2 (a), Fig. 2 (c) is the plan view of shielding ring 25, Fig. 2 (d) is The sectional view of BB' of Fig. 2(c).

[0024] As shown in FIG. 1 , this plasma processing apparatus has a cylindrical processing container 1 made of aluminum or the like, and an upper electrode 2 and a lower electrode 3 arranged to face each other in the processing container 1 .

[0025] Openings 4 and 5 are provided on the side wall of the processing container 1 for taking in or taking out, for example, a semiconduct...

no. 2 approach

[0051] The processing method of the quartz component for the plasma processing apparatus of the second embodiment is, after diamond grinding, carry out thermal polishing (fire-polish) as heat treatment by burner etc., then by particle size, be about 500# for example (the first particle size) for surface processing, such as sandblasting or grinding, and finally, wet etching with hydrofluoric acid (HF). Before the thermal polishing treatment, if necessary, the abrasive material with a particle size of 320-400# can also be used for surface processing, such as sandblasting processing.

[0052] As described in the first embodiment, when performing surface treatment of quartz components for plasma processing equipment, it is very important to maintain basic unevenness that can adhere and hold deposits, and not to generate microcracks. .

[0053] For this purpose, first, the surface of the quartz part surface-processed by the following five treatment methods was observed with an ele...

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Abstract

A member of processing a quartz member for a plasma processing device capable of suppressing the production of particles at the beginning of the use thereof and the production of chips thereafter, the quartz member for the plasma processing device, and the plasma processing device having the quartz member mounted thereon, the method comprising the steps of removing a large number of cracks 155 produced, after a diamond grinding, in the quartz member 151 for the plasma processing device used for a shield ring and a focus ring by performing a surface processing with abrasive grains of, for example, #320 to 400 in grain size, and performing the surface processing by using abrasive grains of smaller grain size to remove ruptured layers 163 while maintaining irregularities capable of adhering and holding deposit thereto.

Description

technical field [0001] The present invention relates to a processing method of a quartz component for a plasma processing device, a quartz component for a plasma processing device, and a plasma processing device equipped with a quartz component for a plasma processing device, in particular to a A method for processing a quartz component for a plasma processing apparatus, a quartz component for a plasma processing apparatus, and a plasma processing apparatus incorporating a quartz component for a plasma processing apparatus in a fractured layer that is a cause of generation of particles. Background technique [0002] As an example of a plasma processing apparatus that generates plasma in a processing container and performs predetermined processing on an object to be processed, there is a plasma processing apparatus in which an upper electrode and a lower electrode are arranged to face each other in a processing container. Electrodes. Processing gas is introduced between the o...

Claims

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Application Information

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IPC IPC(8): H01L21/302B44C1/22H01L21/205H01L21/3065
CPCC03C15/02C03C19/00C03B29/025Y02P40/57H01L21/3065
Inventor 杉山智一三枝秀仁冈山信幸饭室俊一今福光祐长山将之三桥康至中山博之黄亚辉
Owner TOKYO ELECTRON LTD