High frequency porcelain with low dielectric constant and preparation method
A technology of low dielectric constant and ceramic material, applied in the field of high frequency and low dielectric constant ceramic material and its preparation, can solve the problems of high sintering temperature, large loss of ceramic material, unsuitable production, etc. Effect of sintering temperature
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Embodiment 1
[0031] Mg 2 TiO 4 : 58g, Mg 2 SiO 4 : 15g, ball milled for 220 minutes after mixing, and synthesized at 800°C for 200 minutes to form a frit. Glass: 25g, Co 2 o 3 : 2g, added to the above-mentioned frit, ball milled for 320 minutes, then added 6g of paraffin wax to granulate, weighed 0.45g for each piece, pressed into tablets, and finally sintered: the sintering system was: after 200 minutes, the temperature was raised to 550°C, and then The temperature was raised to 1160° C. over 50 minutes and kept for 100 minutes.
Embodiment 2
[0033] Mg 2 TiO 4 : 68g, Mg 2 SiO 4 : 19g, ball milled for 260 minutes after mixing, and synthesized at 1100°C for 240 minutes to form a frit. Glass: 10g, Co 2 o 3 : 3g, added to the above-mentioned frit, ball milled for 380 minutes, then added 7g of polyvinyl alcohol to granulate, weighed 0.55g for each piece, pressed into tablets, and finally sintered: the sintering system was: heated to 550°C in 240 minutes, After 70 minutes, the temperature was raised to 1360° C., and the temperature was maintained for 120 minutes.
Embodiment 3
[0035] Mg 2 TiO 4 : 60g, Mg 2 SiO 4 : 20g, ball milled for 240 minutes after mixing, and synthesized at 1000°C for 220 minutes to form a frit. Glass: 17g, Co 2 o 3 : 3g, added to the above frit, ball milled for 360 minutes, then added 6g of paraffin wax to granulate, weighed 0.50g for each tablet, and finally sintered: the sintering system was: after 220 minutes, the temperature was raised to 550°C, and then The temperature was raised to 1260° C. over 60 minutes and kept for 110 minutes.
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