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New type diamondlike film sedimentation technology

A diamond film and deposition process technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problems of poor controllability, poor film quality, complex structure of ion beam deposition method, etc.

Inactive Publication Date: 2005-03-09
深圳市旺博科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] 1. Ion beam deposition (IBD) has a complex structure, requires magnetic filtration, and has a low deposition rate
[0005] 2. Ion beam assisted deposition (IBED) requires dual ion sources, and its deposition speed is also low, making it impossible to achieve large-area deposition
[0006] 3. Magnetron sputtering (MS), which has a low deposition rate, poor film quality and many voids
[0007] 4. Vacuum cathodic arc deposition method (VCAD), the graphite target sputters a large number of magnetic particles, the quality of the deposited film is poor, and the temperature is high
[0008] 5. RF glow discharge plasma chemical vapor deposition (RF-PCVD), small deposition area, complex power supply and poor controllability

Method used

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  • New type diamondlike film sedimentation technology
  • New type diamondlike film sedimentation technology
  • New type diamondlike film sedimentation technology

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Embodiment Construction

[0017] The cathode (5) and anode (6) of the Penning ion source (4) are made of pure graphite, and the proportion of the mixed gas is controlled by the flowmeter according to the above ratio. If the requirements for the film layer are not high, the ordinary gas flow rate can also be used count. The alkane gas should use high purity gas, besides methane, other alkane gases can also be used, only need to adjust the proportion of gas accordingly.

[0018] In Fig. 1, its process parameter is 100mA of discharge current, 500V of discharge voltage, draws voltage 200V, and the distance of substrate (7) to ion source (4) is 200mm, and deposition time is 15 minutes, and its residual gas is all by gas outlet ( 9) Discharge.

[0019] The substrate (7) can be metal or non-metallic material and glass etc., if the film layer is allowed to contain hydrogen, CH can be selected 4 , if it does not contain hydrogen, CO can be used instead 2 or CO.

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Abstract

A process for depositing the quasi-diamond film includes such steps as proportionally mixing CH4 (or CO2, or CO) with H2 and Ar, introducting the mixture to the ion source in vacuum chamber, and depositing film on substrate for 15 min.

Description

technical field [0001] The invention relates to a novel diamond-like film deposition process, which is to deposit the diamond-like film in a large area at low temperature on various substrates, and belongs to the technical field of film deposition. Background technique [0002] Diamond-like Carbon films (DLC) are amorphous carbon films containing diamond structures (SP3 bonds), which have many properties similar to diamond films and are widely used. For example, it can be used as anti-wear coating, high-frequency loudspeaker diaphragm and optical protective film, especially in some occasions where the deposition temperature is required to have a high surface finish, as well as protective films such as computer disks and optical discs. Only diamond-like carbon films ( DLC) to adapt. [0003] Existing DLC ​​deposition methods have their own disadvantages. For example: [0004] 1. Ion beam deposition (IBD) has a complex structure, requires magnetic filtration, and has a low ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27C23C16/50C23C16/513
Inventor 赵跃
Owner 深圳市旺博科技有限公司