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Magnetic random access storage

A technology of random access memory and memory, applied in static memory, digital memory information, information storage, etc., to achieve the effect of reducing complexity and simplifying the unit structure

Inactive Publication Date: 2005-05-18
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The technical problem to be solved by the present invention is to reduce the number of metal wiring layers in an MRAM with magnetic thin film memory cells, so as to reduce process complexity and manufacturing cost

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Such as figure 2 As shown, the magnetic thin film memory cell array in the MRAM memory is composed of a large number of MRAM cells 1, and one MRAM cell 1 includes a magnetic thin film memory cell 2, a transistor ATR 4 and a set of wiring, namely: bit line BL 3a, write word line WWL 3b, ground line GND 3c, read word line RWL 3d, and contact holes 3e, 3f for interlayer connection. Wherein, the bit line BL 3a and the writing word line WWL 3b are arranged above the magnetic thin film memory cell 2 in the layout, and the bit line BL 3a and the writing word line WWL 3b are in a right-angle relationship with each other in the vertical projection.

[0034] Such as image 3 As shown, the entire MRAM cell 1 is composed of several layers 5a, 5b, 5c, 5d, 5e, 5f in which non-functional areas are buried by an insulating buried medium. The metal wiring layer in the MRAM unit 1 has only two layers 5c and 5e, that is, the layer 5e where the bit line BL 3a is located and the layer 5c ...

Embodiment 2

[0036] Such as Figure 4 , Figure 5 As shown, it is a modification of Embodiment 1, in which a transition metal layer 3g is added, so that the magnetic thin film storage unit 2 can be arranged outside the area of ​​the transistor ATR 4 in the vertical projection.

[0037] The magnetic thin-film memory cell array in the MRAM memory is composed of a large number of MRAM cells 1. In one MRAM cell 1, it includes a magnetic thin-film memory cell 2, a transistor ATR 4 and a set of wiring, namely: bit line BL 3a, write word line WWL 3b, ground line GND 3c, read word line RWL 3d, and contact holes 3e, 3f for interlayer connection and transition metal layer 3g. Wherein, the bit line BL 3a and the writing word line WWL 3b are arranged above the magnetic thin film memory cell 2 in the layout, and the bit line BL 3a and the writing word line WWL 3b are in a right-angle relationship with each other in the vertical projection.

[0038] The magnetic thin film memory cell 2 is arranged bel...

Embodiment 3

[0041] Such as Figure 6 As shown, the magnetic thin film memory cell array in the MRAM memory is composed of a large number of MRAM cells 1, and one MRAM cell 1 includes two magnetic thin film memory cells 2a, 2b, transistor ATR 4 and a set of wiring, namely: Bit line BL 3a, write word line WWL 3b, 3i, ground line GND 3c, read word line RWL 3d, 3j, and contact holes 3e, 3f, 3h for interlayer connection. In the layout, the bit line BL 3a and the writing word lines WWL 3b, 3i are arranged above the magnetic thin film memory cells 2a, 2b, and in the vertical projection, the bit line BL 3a and the writing word lines WWL 3b, 3i are in a right-angle relationship with each other.

[0042] The layout of this embodiment makes the two magnetic thin film storage units 2a, 2b share a ground line GND 3c, that is, the transistor ATR 4 units of two adjacent magnetic thin film storage units have a common source region 4a. Therefore, every two MRAM cells 1 can save the area of ​​at least one...

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Abstract

The present invention discloses a kind of magnetic RAM (MRAM). The MRAM unit has bit line BL and word write line WWL in the same side of magnetic film memory unit, and the magnetic film memory unit is connected to the drain of the transistor ART via the contact hole. MRAM unit has ground line GND and the word write line WWL configured in the identical metal wiring layer. This structure has the advantages of reduced metal wire layers and contact holes, simplified technological process, lowered manufacture cost and raised MRAM integration level.

Description

technical field [0001] The invention relates to a magnetoresistive random access memory (Magnetoresistive Random Access Memory), referred to as MRAM, also known as magnetic random access memory (Magnetic Random Access Memory), wherein the storage unit of the MRAM is composed of a magnetic film, and the driving logic device of the MRAM is a semiconductor The components are integrated within a semiconductor substrate. Background technique [0002] As a memory unit of MRAM, the magnetic film contains at least one such film structure: [F1 / NF / F2]. Wherein F1 and F2 represent two magnetic material layers, NF represents a non-magnetic material layer, and the NF layer is between the F1 layer and the F2 layer. In F1 and F2, the magnetization direction of one and only one layer is fixed by an external layer or layers of material (called the pinned layer), so it cannot be changed arbitrarily under the action of a small external magnetic field; while the other layer is soft A magnetic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/15H01L43/00
Inventor 彭子龙王伟宁韩秀峰朱涛詹文山
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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