Unlock instant, AI-driven research and patent intelligence for your innovation.

Storage circuit, semiconductor device, and electronic apparatus

A storage circuit and semiconductor technology, which is applied in the field of semiconductor devices, electronic equipment, and storage circuits, and can solve problems such as static unit misoperation, complicated operation, and small difference

Inactive Publication Date: 2011-03-30
SEIKO EPSON CORP
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the conventional memory cell disclosed in Patent Document 1, it is necessary to precharge the bit line and apply a voltage to the ferroelectric capacitor when transferring data from the nonvolatile part to the static cell. , resulting in operationally complex problems
In addition, in the conventional memory cell disclosed in Patent Document 1, the voltage of one internal node is higher than the voltage of the other internal node, but the difference is small. Therefore, if the transistor constituting the static cell The threshold voltage of the threshold voltage produces a manufacturing deviation, which will cause the problem of static cell misoperation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Storage circuit, semiconductor device, and electronic apparatus
  • Storage circuit, semiconductor device, and electronic apparatus
  • Storage circuit, semiconductor device, and electronic apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] Hereinafter, according to the accompanying drawings, the best implementation mode of the present invention will be described in detail. The embodiments described below do not unduly limit the content of the present invention described in the scope of the patent application. In addition, not all the components described below are essential components of the present invention.

[0027] figure 1 is a configuration diagram of a ferroelectric memory device 500 as an example of a semiconductor device according to a preferred embodiment of the present invention. The ferroelectric memory device 500 includes a memory cell array 510 , a column decoder 520 , a row decoder 530 , a control unit 540 , a redundant cell array 550 and a redundant circuit 600 .

[0028] The memory cell array 510 is composed of a plurality of ferroelectric capacitors arranged in an array. Each ferroelectric capacitor is controlled by any one of word lines BL and WL among word lines WL1 to WLm (m is an ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

To provide a storage circuit that can readily and stably read memory data, in storage circuits that are used mainly in program circuits. A storage circuit that is equipped with a flip-flop having a first terminal and a second terminal, a storage section having a first ferroelectric capacitor and a second ferroelectric capacitor for storing specified data, a control section that supplies a drivingvoltage to the flip-flop, and controls potentials on the first terminal and the second terminal based on the specified data, thereby retaining the specified data at the flip-flop, and a latch circuitthat latches the specified data retained by the flip-flop based on potentials on the first terminal and the second terminal.

Description

technical field [0001] The present invention relates to a storage circuit, a semiconductor device and electronic equipment. In particular, the present invention relates to a simple and stable memory circuit, a semiconductor device and electronic equipment including the memory circuit. Background technique [0002] A conventional memory cell is disclosed in Japanese Patent Application Laid-Open No. 64-66899 (Patent Document 1). The memory cell disclosed in the above-mentioned Patent Document 1 includes a static cell having two internal nodes, and a nonvolatile portion having two ferroelectric capacitors. Then, by applying a voltage to the ferroelectric capacitor that causes the ferroelectric capacitor to undergo polarization reversal, the voltage of one internal node is slightly higher than the voltage of the other internal node. Thus, data is transferred from the non-volatile part to the static unit. [0003] (Patent Document 1) Japanese Patent Application Laid-Open No. 6...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/00G11C11/22G11C29/04G11C14/00
CPCG11C14/00G11C14/0072G11C5/14G11C7/22G11C11/221G11C11/225
Inventor 小出泰纪
Owner SEIKO EPSON CORP