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Sense amplifier with configurable voltage swing control

A technology of sense amplifiers and control gates, applied in the direction of measuring current/voltage, instruments, measuring devices, etc., can solve problems such as voltage swing changes

Inactive Publication Date: 2005-10-26
ATMEL CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this technique may result in large changes in voltage swing due to changes in device parameters

Method used

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  • Sense amplifier with configurable voltage swing control
  • Sense amplifier with configurable voltage swing control
  • Sense amplifier with configurable voltage swing control

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Experimental program
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Embodiment Construction

[0011] like figure 1 As shown, a preferred embodiment of the sense amplifier 15 of the present invention includes a sense input node 20 connected to the bit lines of an array of memory cells. An activation signal 30 is input to a sense circuit 35 to detect and determine the data content in memory cells connected to sense amplifier 15. The speed of the readout circuit 35 is set by boosting the activation signals received by the readout circuit 35, BOOST 80 and BOOST# 82; more details will be discussed in connection with FIG. 2 below. The activation signal 30 is used to control the operating speed of the readout circuit. The output 38 of the sense circuit 35 is input to the amplifier circuit 45, which converts the out-of-order level of the bit line to the standard digital logic level, the standard digital logic level and any other connected to the sense amplifier output 40. Compatible with peripheral circuits. Alternatively, one or more buffer circuits 55 may be connected aft...

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Abstract

A sense amplifier (15) that is configurable to operate in two modes in order to control a voltage swing on the sense amplifier output (40). The sense amplifier has two feedback paths (45 to 35) including a first feedback path (P101, N101, N133) having a transistor (N133) with a fast response time in order to allow the circuit to operate as fast as possible, and a second feedback path (P121, P102, N102, N121, N132, N131) for providing voltage swing control. In the first operating mode, the ''turbo'' mode, both feedback paths are in operation (BOOST = HIGH) to provide a higher margin of swing control, thus higher sensing speed. In the second operating mode, the ''non-turbo'' mode, only the first feedback path is in operation (BOOST = LOW) which allows for greater stability and a reduction in power consumption.

Description

technical field [0001] The present invention relates to sense amplifiers for reading data in CMOS memory cells and, in particular, to lock-in control circuits within such sense amplifiers. technical background [0002] In integrated memory circuits, sense amplifiers are often used to increase the speed performance of the memory and to provide signals consistent with the requirements of driving peripheral circuits in the memory. A sense amplifier is an active circuit that reduces the signal transfer time from an accessed memory cell to logic circuits in the periphery of the memory cell array, and converts out-of-order logic levels generated on bit lines into digital logic for peripheral circuits level. The sense portion of the sense amplifier detects and determines the data content in the selected memory cell. Readout can be "non-destructive", characterized by the fact that the data content of selected memory cells is unchanged, such as in static memory (SRAM), read-only me...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/419G11C7/06
CPCG11C7/08G11C7/067G11C7/065G11C2207/065G11C7/06
Inventor N·特勒柯
Owner ATMEL CORP