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Method for correcting mask pattern

A graphics and mask technology, applied in the field of mask graphics correction method, can solve the problem of changing the correction amount

Inactive Publication Date: 2005-10-26
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] Although the step difference can be covered up according to these methods, when the correction amount on each side near the corner is different (such as the correction amount a and b in Figure 1), there will be a problem that the correction amount will change after the step difference is reduced in size problem, and due to the change of the correction amount, the shape (morphology) of the graph will change

Method used

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  • Method for correcting mask pattern
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  • Method for correcting mask pattern

Examples

Experimental program
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Embodiment 1

[0056] In this embodiment, a method of deleting a depressed portion generated between corrected figures at the corners of figures due to line width correction will be described. Figure 6A shows the corner of a pattern with recesses to be masked according to the invention. Graph P1 in FIG. 6A includes the same 135-degree corners (portions surrounded by circles) as in FIG. 2 . Assume that the correction amounts of the correction patterns C1 and C2 on both sides of the 135-degree corner are different.

[0057] In order to cover the depressed portion D in FIG. 6A, first, the size of the pattern is enlarged by MAX (deviation) times as shown in FIG. 6B. Then, as shown in FIG. 6C, the edges of the pattern are shifted by MAX (deviation) in the vertical direction with respect to each edge. Temporary areas T1 and T2 are thus formed. The order of enlarging the size shown in FIG. 6B and moving the graphic edge shown in FIG. 6C can be reversed.

[0058] Next, as shown in FIG. 7A, the d...

Embodiment 2

[0064] The difference between this embodiment and Embodiment 1 is only the angle of the corners. Fig. 8A shows a corner of a pattern with recesses to be masked in this embodiment. The graph P2 of FIG. 8A includes a 90-degree corner (portion surrounded by a circle) as in FIG. 1 . Assume that the correction amounts of the correction patterns C1 and C2 on both sides of the 90-degree corner are different from each other.

[0065] In order to cover the depressed portion D in FIG. 8A, first, the size of the pattern is enlarged by MAX (deviation) times as shown in FIG. 8B. Then, as shown in FIG. 8C, the edges of the figure are shifted by MAX (bias) in the vertical direction with respect to each edge. Temporary areas T1 and T2 are thus formed. The order of enlarging the size shown in FIG. 8B and moving the graphic edge shown in FIG. 8C can be reversed.

[0066] Next, as shown in FIG. 9A, the difference Pd between the enlarged pattern in FIG. 8B and the entire temporary areas T1 an...

Embodiment 3

[0072] In this embodiment, a method of deleting a depressed portion generated between corrected figures at the corners of figures due to line width correction will be described. Fig. 11A shows a corner of a pattern with protrusions to be corrected according to the present invention.

[0073] In Figures 1 and 2, the corner of the figure is less than 180 degrees, but in this embodiment the opposite is true, the corner of the figure is 225 degrees as in Figure 3, ie more than 180 degrees. In this case, the correction figure can be said to be formed inside the 135-degree corner.

[0074]Also in this embodiment it is assumed that the correction amounts of the correction patterns C1 and C2 on both sides of the corner are different from each other. As shown in FIG. 11A, when the corner of the figure P3 exceeds 180 degrees, the correction figures at the corner of the figure overlap partially (circle-enclosed part).

[0075] In order to cover the depression D shown in FIG. 11A, first...

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Abstract

A mask pattern correction method able to easily eliminate a fine step difference generated after line width correction of a pattern is provided. This is made a correction method of a mask pattern comprising a step of finding a difference between a graphic obtained by oversizing a pattern including a corner and temporary regions formed by shifting the pattern edge; a step of extracting an edge not contacting the line width corrected figure (region designation edge) from the difference; a step of forming a rectangle having the region designation edge as one side; and a step of deleting the rectangle from the difference to obtain a pattern burying the fine step difference.

Description

technical field [0001] The present invention relates to a correction method of a mask pattern for photolithography. technical background [0002] Demand for miniaturization of semiconductor devices has been increasing in recent years. The current design planning has reached less than 1 / 2 of the exposure wavelength of lithography. Attention is now focused on electron beam lithography, which enables further device miniaturization. [0003] Along with miniaturization of patterns, a problem (proximity effect) arises that the pattern on the mask is different from the pattern actually transferred. In order to reduce the influence of the proximity effect, it is necessary to carry out the correction of the proximity effect on the graphics. One form of proximity effect correction is line width correction. [0004] The widely used line width correction is mask pattern data processing, which precisely adjusts the line width of each interconnect line to an original The specified of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/36G03F1/68H01L21/027
CPCG03F1/144G03F1/36G03F1/72
Inventor 小川和久
Owner SONY CORP