Chemical vapor deposition equipment and deposition method

A technology of chemical vapor deposition and vapor deposition, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problem of high price of quartz glass substrate, unable to solve the problem of temperature resistance of glass substrate, enlarge the reaction chamber and Issues such as the cost of glass substrates

Inactive Publication Date: 2005-11-16
SOUTHEAST UNIV
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this time, the reaction chamber cavity and glass substrate are required to be able to withstand high temperatures above 700°C. If quartz glass can meet the requirements, this will greatly increase the cost of the reaction chamber and glass substrate, especially the price of quartz glass substrates is too high to be meet practical requirements
The cold wall technology of the heating plate can solve the problem of temperature resistance of the reaction chamber cavity, and only heat the glass substrate, but it still cannot solve the problem of temperature resistance of the glass substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical vapor deposition equipment and deposition method
  • Chemical vapor deposition equipment and deposition method
  • Chemical vapor deposition equipment and deposition method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The device that the chemical vapor deposition method of the present invention adopts is by the reaction chamber cavity 1 of band reaction gas inlet 2 and reaction gas outlet 3, needs the substrate 5 with metal layer of chemical phase deposition, the non-metallic substrate that places substrate The heat insulating support 9, the high-frequency magnetic field generating device 7, and the reaction gas 6 are composed; wherein the reaction gas 6 is located in the reaction chamber cavity 1, and the reaction gas inlet 2 and the reacted gas outlet 3 are respectively located at two ends of the reaction chamber cavity 1. At the end, the substrate 5 with the metal layer is located on the non-metal heat insulating support 9, and is located in the reaction chamber cavity 1 at the same time, and the high-frequency magnetic field generating device 7 is located outside the side of the reaction chamber cavity 1, and the high-frequency magnetic field generating device 7 The generated magn...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A chemical vapor deposition apparatus for growing film or material (such as carbon nanofibres) on metal layer or catalyst is disclosed. A HF magnetic field acts on the metallic layer in the non-metal reaction chamber to generate eddy effect. The substrate containing metallic layer on a non-metal plate is heated to a controlled temp while the intensity, frequency and acting time of a magnetic field are controlled for growing film at defined position. The polarity of the magnetic field is controlled for directional growing.

Description

technical field [0001] The invention relates to a chemical vapor deposition method, in particular to a method for growing films or materials such as carbon nanofibers on metal layers or catalysts by using high-temperature chemical vapor deposition methods. Background technique [0002] The chemical vapor deposition method is a method of thin film and material synthesis. The required materials are produced on the substrate through chemical reactions such as decomposition, combination, reduction, and replacement of gases under certain temperature, pressure, and catalyst conditions. The chemical vapor deposition method has been in industrial application for 25 years. This technology has been widely used in the production of integrated and large-scale integrated circuits, titanium carbide high-hard coatings, carbon nanotubes, and diamond films. However, the temperature of chemical vapor deposition is usually very high, generally at 400-1100°C, the lowest is tens of degrees, and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
Inventor 张晓兵雷威娄朝刚
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap