Plasma processing apparatus, method for producing reaction vessel for plasma generation, and plasma processing method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- MATSUSHITA ELECTRIC WORKS LTD
- Publication Date
- 2005-11-23
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The present invention relates to a plasma processing apparatus and method for efficient large-area plasma processing. Background technique
[0002] In the past, plasma surface treatment has been widely used for the following purposes: removing impurities such as organic materials from the object to be treated, etching or stripping resists, improving the adhesion of organic films, reducing metal oxides, forming films, electroplating and coating pretreatment, as well as surface modification of various materials and parts.
[0003] For example, Japanese Patent Laid-Open [kokai] No. 11-335868 discloses surface treatment using plasma in which plasma is generated by applying a voltage between a pair of electrodes while supplying plasma-generating gas to the discharge space. generated in the discharge space between the electrodes. In this plasma surface treatment, since plasma or plasma activated species (species) is ejected from a single nozzle, and the ob...