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Al/Ti/Al/Ti/Au ohmic contact system adapted to GaN device

A technology of ohmic contact and alloy, which is applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as theories to be discussed, and achieve the effect of smooth shape, large process selection range, and large selection range

Active Publication Date: 2006-02-15
中科芯未来微电子科技成都有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, we have found through experiments that this theory is open to question

Method used

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  • Al/Ti/Al/Ti/Au ohmic contact system adapted to GaN device
  • Al/Ti/Al/Ti/Au ohmic contact system adapted to GaN device
  • Al/Ti/Al/Ti/Au ohmic contact system adapted to GaN device

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] In Fig. 1, the structure of the present invention can achieve ideal ohmic contact for AlGaN / GaN HEMTs with both doped and undoped structures.

[0042] Figure 2 is a schematic diagram of the general structure of an AlGaN / GaN HEMT, indicating that an ohmic contact is to be made on the AlGaN surface shown in the figure.

[0043] Figure 3 shows the result of developing the coated photoresist.

[0044] Figure 4 shows the results after evaporating source and drain metals. (Evaporated Al / Ti / Al / Ti / Au)

[0045] Figure 5 is a diagram of the sequence and composition of the evaporated metals, using a five-layer Al / Ti / Al / Ti / Au metal structure. For the traditional Ti / Al / Ti / Au structure, the order of evaporation is Ti, Al, Ti, Au.

[0046] Comparison of the structure of the present invention with the conventional structure. The left is the alloy structure of the traditional ohmic contact, and the right is the alloy structure of the ohmic contact of the present invention.

[0047]...

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Abstract

This invention relates to semiconductor technique field, particular to ohmic contact Al / Ti / Al / Ti / Pt / Au alloy system for AlGaN / GaN HEMT device, wherein, the ohmic contact metal is five-layer structure of AlTiAlTiAu, the first contact metal layer is Al followed by Al / Ti / Al / Ti / Au, which needs condition of alloy temperature 680-760Deg alloy time 20-60, fits to large selecting range, decreases technical difficulty and improves the repeatability.

Description

technical field [0001] The invention relates to the technical field of ohmic contacts of AlGaN / GaN HEMT devices, in particular to a novel ohmic contact Al / Ti / Al / Ti / Au alloy system suitable for AlGaN / GaN HEMT devices. Background technique [0002] At present, the development of GaN devices has become a research hotspot in the field of compound device circuits. Ohmic contact is the key technology of AlGa / GaN devices. Elementary or quaternary alloys may be low-barrier contact materials. In addition, the solid-state reaction between the metal and AlGaN also leads to the heavy doping of the metal / AlGaN interface; at the same time, the overflow diffusion of N in GaN makes the N vacancies that act as donors at the interface Increased, the electron concentration in this area is heavier, so a good ohmic contact can be formed. [0003] Ohmic contact technology is one of the key technologies of AlGaN / GaN HEMT (HEMT stands for "high electron mobility transistor" (high electronic migrat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3205B32B15/01
Inventor 魏珂和致经刘新宇刘健吴德馨
Owner 中科芯未来微电子科技成都有限公司