Backing plates for sputtering targets

Abstract

A backing plate for a sputtering target includes an aluminum alloy having an average linear expansion coefficient of 23.0×10-6/°C or less at a temperature of 25°C to 100°C. This kind of backing plate prevents the warpage that occurs when it is combined with the target, reduces the stress that occurs during the film deposition (sputtering) of the Al-Nd alloy film, saves the warpage leveling treatment, and reduces the installation time. Fracture of the brazing material between the target and the backing plate enables a stable film deposition operation over a long period of time.

Description

technical field [0001] The present invention relates to a backing plate for a sputtering target. Specifically, it relates to a backing plate for a sputtering target, which prevents warpage during bonding with the target and / or film deposition (sputtering) of an Al-Nd alloy thin film, and enables long-term stable film deposition operations. Background technique [0002] Sputtering is commonly used to make the thin films that make up liquid crystal panels and organic electroluminescent (EL) panels used in televisions, laptops, and other monitors , and to fabricate interconnect films for optical recording and semiconductor fields. In the sputtering method, a plasma discharge is induced between a substrate and a target serving as a film material, the gas ionized by the plasma discharge collides with the target, thereby knocking atoms out of the target, and these atoms are deposited on the substrate to produce thin films. Compared with vacuum vapor deposition and arc ion plat...

AI Technical Summary

Problems solved by technology

According to this technique, the combination of target and backing plate does not sufficiently and reliably reduce the difference in coefficient of thermal expansion, and does

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