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Nondestructive characterization of thin films using measured basis spectra and/or based on acquired spectrum

A technique of spectroscopy and characterization, applied in the use of wave/particle radiation for material analysis, the use of optical devices, the use of wave/particle radiation, etc.

Active Publication Date: 2006-05-17
NOVA MEASURING INSTR LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Such challenges are not limited to the desire for near-atomic and monolayer spatial resolution, but are amplified by the level of precision, precision, and speed required by the semiconductor manufacturing industry

Method used

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  • Nondestructive characterization of thin films using measured basis spectra and/or based on acquired spectrum
  • Nondestructive characterization of thin films using measured basis spectra and/or based on acquired spectrum
  • Nondestructive characterization of thin films using measured basis spectra and/or based on acquired spectrum

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Embodiment Construction

[0052] Analytical systems and methods according to the present invention should refer to Figure 1-15 describe. Such systems and methods can be used to analyze synthetic materials during development, to help identify solutions to processing problems, to identify sources of contamination, to improve yield in device manufacturing, to help monitor processes and produce devices, and for failure analysis technology. Further, the system and method can be used for thin film characterization related to various industrial applications, such as semiconductor devices, magnetic storage media, display technology, automation materials, aerospace materials, polymer products and / or biomaterials.

[0053] In general, the analysis systems and methods described herein preferably provide non-destructive, eg, non-invasive, analysis systems and methods that typically include the acquisition of thin film surface spectroscopic measurements (eg, XPS spectra). Thereafter, the characteristics of the fil...

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Abstract

The present invention provides the ability to use a comparison process (e.g., a matching process) to compare measured peak forms of elements and / or chemicals (e.g., previously measured peak forms for silicon under a particular procedure being monitored) and to collect Spectral data (eg, using a non-linear least squares fitting algorithm) were used for characterization of the film layer. Further, the present invention uses the collected spectral data to provide characterization of the film layer (eg, measurement of silicon oxynitride film thickness). For example, the obtained spectra may be cumulatively synthesized and the geometrical characteristics of the synthesized spectra may be used to determine concentration information of the constituents. Thickness measurements of thin films can be provided based on the above-mentioned component concentration information.

Description

technical field [0001] The present invention relates to the characterization of solid samples, eg thin films. More particularly, the invention is applicable to characterizing such samples using non-destructive techniques. Background technique [0002] The characterization or analysis of samples (eg, thickness of films, concentrations of elements and / or chemicals in films formed on substrates) is necessary in the production of many different types of devices (eg, electronic and optoelectronic devices). For example, it may be necessary to determine the composition of thin dielectric films (eg, gate oxide films, tantalum nitride films, etc.) formed on known semiconductor integrated circuit devices such as processing devices and memory devices. Increasing the density of such devices on integrated circuit chips and reducing the size of the devices requires advances in production processes and characterization techniques related to the materials used to fabricate such devices. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01B11/06G01B15/02G01N23/227
CPCG01B15/02
Inventor P·E·拉森D·G·沃森J·F·莫尔德
Owner NOVA MEASURING INSTR LTD
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