Dielectric ceramic composition, electronic component, and method for manufacturing the same

A manufacturing method and dielectric technology, which is applied in the direction of fixed capacitor dielectric, fixed capacitor parts, laminated capacitors, etc., can solve the problems of high sintering furnace price, reduced capacitor dielectric constant, and increased energy cost.

Active Publication Date: 2006-06-21
TDK CORPARATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, if the sintering temperature is high, the following inconveniences will occur
[0006] First, the temperature range above or close to the melting point of the base metals such as Ni as the material for forming the internal electrodes, as a result, becomes a major cause of the following inconvenience: the base metal particles sintered simultaneously with the dielectric ceramic composition are fused and balled. , and the linearity of the internal electrode layer deteriorates, i.e., cracks occur in the internal electrode layer
If the linearity of the internal electrode layer deteriorates, the dielectric constant of the obtained capacitor will decrease, resulting in a decrease in capacitance, which will eventually fail to meet high capacity and thin layers.
[0007] Second, the price of the sintering furnace is high, and the damage of the sintering furnace used is also serious. The maintenance and management costs of the sintering furnace increase with the use time, and at the same time, the energy cost required for vitrification also increases
[0009] On the other hand, if the calcination temperature is too low, densification cannot be achieved during vitrification, and a dielectric ceramic composition with sufficient characteristics cannot be obtained.

Method used

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  • Dielectric ceramic composition, electronic component, and method for manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0127] Modulation of Dielectric Raw Materials

[0128] First, SrCO with an average particle size of 0.4 μm was prepared as the starting material for the preparation of the main component raw material. 3 , CaCO 3 、TiC 2 , ZrO 2 and HfO 2 .

[0129] Then, according to the final composition [Ca 0.7 Sr 0.3 ]O][((Ti 0.05 Zr 0.9 f 0.05 )O 2 ] atomic ratio, weigh the prepared initial raw materials.

[0130] Next, 1 mole of MnCO was added to a total of 100 moles of the weighed starting materials. 3 , 0.5 moles of Al 2 o 3 , 3 moles of (Ba 0.6 Ca 0.4 ) SiO 3 (BCG) as the first glass composition. In addition, a specific weight % of B-Al-Zn-Si-based glass frit was added as a second glass composition to a total of 100% by weight of each starting material after weighing, and a powder before firing was obtained after the addition.

[0131] Next, the obtained pre-calcination powder was calcined. Calcination conditions are as follows. Heating rate: 200°C / hour, holding temp...

Embodiment 2

[0161] As B-Al-Zn-Si-based glass frit, except for using Na 2 O, consisting of 25% by weight of B 2 o 3 , 25 wt% ZnO, 25 wt% SiO 2 , 25 wt% Al 2 o 3 In the same manner as sample 6 of Example 1, except that it had a configuration and a softening point of 650° C., a disk-shaped sample and a capacitor sample were prepared and evaluated in the same manner (sample 13). Table 2 shows the results.

[0162] Sample No.

[0163] As shown in Table 2, it can be considered that, as the second glass composition, using 2 The B-Al-Zn-Si-based glass frit of O was sintered at a low temperature as in the case of sample 6, and the sintered density did not decrease significantly, and the average crystal grain size of the dielectric particles was also suitable, and a good frit was obtained. insulation resistance.

Embodiment 3

[0165] As the B-Al-Zn-Si glass frit, in addition to using 35% by weight of B 2 o 3 , 10 wt% ZnO, 35 wt% SiO 2 , 5 wt% Al 2 o 3 , 5% by weight Na 2 Except having a composition of O and having a softening point of 610° C., a disk-shaped sample and a capacitor sample were prepared in the same manner as in Sample 6 of Example 1, and evaluated in the same manner. As a result, the same result was obtained. In addition, this Example is an example of the case where the composition of a glass frit falls within the optimum range of this invention.

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Abstract

A method for producing a dielectric ceramic composition, which comprises dielectric oxide, manganese oxide, aluminum oxide, and sintering aid represented by the structural formula [(CaxSr1-x)O] m [(TiyZr1-y-zHfz)O2] Porcelain composition, the symbols x, y, z, m representing the composition molar ratio in the above structural formula are 0.5≤x≤1.0, 0.01≤y≤0.10, 0<z≤0.20, 0.90≤m≤1.04, characterized in that, Using a sintering aid to manufacture a dielectric porcelain composition, the sintering aid has: SiO2 as a main component, further comprising MO (wherein M is at least one of Ba, Ca, Sr and Mg), a first glass composition; It constitutes a second glass composition including B2O3, Al2O3, ZnO, and SiO2, and has an average particle diameter of 1.5 μm or less. According to this invention, it is possible to provide a method for producing a dielectric ceramic composition capable of obtaining a dense dielectric ceramic composition without impairing various electrical properties even when fired at a low temperature.

Description

technical field [0001] The present invention relates to, for example, a dielectric ceramic composition used as a dielectric layer of a laminated ceramic capacitor and a method for producing the same, and an electronic component using the dielectric ceramic composition as a dielectric layer and a method for producing the same. Background technique [0002] As an example of an electronic component, the structure of the dielectric ceramic composition of the dielectric layer of a laminated ceramic capacitor includes the ferroelectric BaTiO 3 , Constant dielectric SrTiO 3 , CaTiO 3 , CaSrZrO 3 , CaZrO 3 , SrZrO 3 、TiO 2 , NdTiO 3 and other dielectric oxides. [0003] In recent years, reduction-resistant dielectric ceramic compositions have been developed. With this reduction-resistant dielectric ceramic composition, base metals such as Ni and Cu can be used as materials for internal electrodes without semiconductorization even when sintered in a neutral to reducing atmosp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/49H01G4/12H01B3/02H01B3/12H01G4/30
Inventor 佐佐木洋丹羽康夫渡边松巳
Owner TDK CORPARATION
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