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Composition for selectively polishing silicon nitride layer and polishing method employing it

A technology of polishing composition and silicon nitride layer, which is applied in the field of polishing, can solve problems such as complex methods and difficult control methods, and achieve the effect of easy waste liquid treatment

Active Publication Date: 2006-07-05
FUJIMI INCORPORATED
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] As mentioned above, in the conventional method, it is difficult to control the method itself in order to prevent various problems occurring at the same time, making the method complicated

Method used

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  • Composition for selectively polishing silicon nitride layer and polishing method employing it

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preparation example Construction

[0033] (d) Preparation method of polishing composition

[0034] The polishing composition of the present invention is prepared by dissolving or dispersing the above-mentioned components in water. The method of dissolving or dispersing is optional, and the order of mixing the components or the method of mixing are not limited.

[0035] The polishing composition of the present invention can be made into a higher concentration stock solution, which can be stored or transported, and can be diluted for use before the actual polishing operation.

[0036] Specifically, the polishing composition of the present invention can be made in the form of a concentrate, that is, when the polishing composition is prepared, the water content is less than the content when the composition is used in the polishing step, and when the concentrate is used in the polishing step , diluted with water to form a polishing composition satisfying the above characteristics.

[0037] Polishing method

[003...

Embodiment

[0041] As an example of a polishing composition satisfying the conditions of the present invention, acetic acid is used as an acid additive and added to an aqueous dispersion containing 5% by weight of abrasive grains with an average particle diameter of 13 nm, such as figure 1 As shown, when the pH value of the liquid phase is adjusted to about 4.5, the optimum adsorption concentration on the abrasive grain surface becomes the equilibrium adsorption concentration. When the polishing pressure is 34.5 kilopascals and the polishing line speed is 42 m / min, the above-mentioned composition is used as the polishing composition, and when polishing, the material removal rate of the silicon nitride layer is 116.7 nm / min, and the oxidation The removal rate of the silicon layer was 1.9 nm / min. This corresponds to a selectivity of about 60, but the chemical etching of both layers by this polishing composition is below the detection limit. For the polishing composition, when the concentra...

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Abstract

Provided is a polishing composition, the material removal rate of the silicon nitride layer is higher than the material removal rate of the silicon oxide layer, has basically no adverse effect on polishing planarization, can achieve a sufficient removal rate of the silicon nitride layer, and also provides A polishing method using the composition. A polishing composition comprising silicon oxide abrasive particles, an acid additive and water. When the acid additive forms an 85% by weight aqueous solution, the chemical etching rate of the silicon nitride layer is at most 0.1 nm / hour in an atmosphere of 80°C. . A particularly preferred composition is one in which the average particle size of the silicon oxide abrasive particles is 1-50 nanometers and the pH value is 3.5-6.5.

Description

technical field [0001] The present invention relates to a polishing composition for removing a silicon nitride layer in a polishing step in the production of semiconductor devices, and also to a polishing method using the composition. In particular, the present invention relates to an inexpensive polishing composition having performance equal to or greater than conventional etch removal so that the removal step can be accomplished without damaging portions of the silicon oxide layer or polycrystalline or The monocrystalline silicon part can also be easily treated with waste liquid, and also relates to a polishing method using the polishing composition. Background technique [0002] In the production of semiconductor devices, the step of removing the silicon nitride layer is performed at various stages, for example, in the step of forming an element separation structure, the silicon nitride layer as a barrier layer is removed, but so far, this This removal step is usually pe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14C09C1/68H01L21/304B24B37/00
CPCH01L21/31053C09G1/02C09K3/14
Inventor 平光亚衣伊藤隆堀哲二
Owner FUJIMI INCORPORATED
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