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Thin magnetron structures for plasma generation in ion implantation systems

An ion implantation system, plasma technology, applied in the field of space charge neutralization, ion plasma generation system, can solve problems such as difficulties, expensive optical components, and increased implementation

Inactive Publication Date: 2006-07-26
AXCELIS TECHNOLOGIES
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  • Summary
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Problems solved by technology

This additional space is expensive in terms of power consumption of the optics and also increases the difficulty of implementation

Method used

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  • Thin magnetron structures for plasma generation in ion implantation systems
  • Thin magnetron structures for plasma generation in ion implantation systems
  • Thin magnetron structures for plasma generation in ion implantation systems

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Embodiment Construction

[0033] The present invention is described below with reference to the accompanying drawings, wherein like reference numerals are used to refer to like elements throughout. The illustration and the following description are exemplary and not restrictive in nature. It should therefore be appreciated that variations of the described systems and methods, as well as other such embodiments than those described herein, are deemed to fall within the scope of the invention and the appended claims.

[0034] The present invention relates to systems and methods for forming plasmas in ion implantation systems. The system and associated method include generating perpendicular magnetic and electric fields, resulting in the generation of mobile electrons within a defined area. The moving electrons collide with the gas within the region and cause ionization of the gas, resulting in the creation of a plasma for space charge neutralization in the ion beam. Further recognition of the present in...

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Abstract

A plasma generator for space charge neutralization of an ion beam is disclosed and resides within an ion implantation system operable to generate an ion beam and direct the ion beam along a beamline path. The plasma generator comprises an electric field generation system operable to generate an electric field in a portion of the beamline path, and a magnetic field generation system operable to generate a magnetic field in the portion of the beamline path, wherein the magnetic field is perpendicular to the electric field. The plasma generator further comprises a gas source operable to introduce a gas in a region occupied by the electric field and the magnetic field. Electrons in the region move in the region due to the electric field and the magnetic field, respectively, and at least some of the electrons collide with the gas in the region to ionize a portion of the gas, thereby generating a plasma in the region.

Description

technical field [0001] The present invention generally relates to ion implantation systems, and more particularly to plasma generation systems and methods associated therewith for neutralizing space charges associated with an ion beam. Background technique [0002] Ion implantation systems are used to dope semiconductors with impurities during integrated circuit fabrication. In such a system, the ion source ionizes the desired dopant elements, which are extracted from the source in the form of an ion beam. The ion beam is typically mass analyzed to select ions with the desired charge-to-mass ratio and then directed at the surface of the semiconductor wafer to dope the wafer with doping elements. For example, during the fabrication of transistor devices in a wafer, beam ions penetrate the wafer surface to form regions of desired conductivity. A typical ion implanter includes an ion source for generating an ion beam, a beamline assembly including mass spectrometry equipment ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/317H01J37/02
CPCH01J2237/0041H01J37/3266H01J37/3171H01J37/32082
Inventor V·班威尼斯特W·迪佛吉利欧B·梵德伯格
Owner AXCELIS TECHNOLOGIES
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