Cellular automation method for simulating anisotropic silicon-etching process

A cellular automaton and corrosion process technology, applied in the process of producing decorative surface effects, decorative arts, gaseous chemical plating, etc., can solve the problems of complex boundary conditions, difficult to introduce high Miller index crystal planes, etc. Accurate simulation, fast simulation speed, fast and accurate simulation effect

Inactive Publication Date: 2006-08-02
SOUTHEAST UNIV
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Problems solved by technology

[0005] Technical problem: The object of the present invention is to provide a cellular automata method for simulating the anisotropic corrosion process of silicon, which solves the problem th

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  • Cellular automation method for simulating anisotropic silicon-etching process
  • Cellular automation method for simulating anisotropic silicon-etching process
  • Cellular automation method for simulating anisotropic silicon-etching process

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[0025] In the present invention, the lattice structure of silicon dioxide is used as the lattice structure of the cellular automaton, as attached figure 1 Shown. By introducing more crystal planes that often appear in the anisotropic etching process of silicon on the surface of the substrate, and the crystal planes appearing during the cell etching process of the surface of the substrate affect the etching process of the internal cells of the silicon substrate. It can effectively introduce high Miller index crystal planes and effectively simplify the boundary conditions. This method satisfies the following two conditions:

[0026] a. The lattice structure of silicon is used as the lattice structure of the cellular automaton. By introducing more silicon into the surface of the substrate, crystal planes that often appear during the anisotropic etching process, and appearing during the cellular etching process of the substrate surface The crystal plane affects the corrosion process ...

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Abstract

The cellular automaton method for simulating anisotropic silicon-etching process meets the following two conditions. The first condition is to adopt the crystal lattice structure of silicon as that of cellular automaton, introduce more crystal face appeared in the anisotropic silicon-etching process to the substrate surface layer and affect the etching process of inner substrate cells with the crystal face appeared in the surface substrate layer cell etching process. The second condition is that the determination of the surface layer cell boundary condition during the surface substrate layer cell etching process depends only on the surface layer cells, resulting in reduced considered cell number, high precision and fast simulating speed. The present invention has the advantages of fast operation speed and high precision and possesses practical significance in realizing the fast precise simulation of anisotropic silicon-etching process.

Description

technical field [0001] The invention provides a cellular automaton method for simulating the anisotropic corrosion process of silicon, and belongs to the technical field of simulation of the anisotropic silicon corrosion process. Background technique [0002] The anisotropic etching technology of silicon means that different crystal planes of silicon have different etching rates during the etching process of silicon. It is one of the main processes of micromechanical electronic system (MEMS) processing. Realizing the simulation of silicon anisotropic etching process can effectively optimize MEMS structure and process, reduce the cost of trial production, shorten the design cycle and enhance the market competitiveness of products. [0003] At present, the methods for simulating the anisotropic etching process of silicon can basically be divided into two categories: geometric methods and cellular automata methods. With the improvement of computer computing speed and the incre...

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Application Information

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IPC IPC(8): B81C1/00
Inventor 周再发黄庆安李伟华
Owner SOUTHEAST UNIV
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