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Semiconductor device and manufacturing method thereof

A technology of semiconductors and devices, applied in the field of semiconductor devices and their manufacturing, can solve the problems of increasing manufacturing costs and increasing the number of photolithography steps, and achieve the effects of reducing costs, less material loss, and high reliability

Inactive Publication Date: 2006-08-09
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the number of photolithography steps is increased, which inevitably increases the manufacturing cost

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Experimental program
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Effect test

Embodiment approach 1

[0063] refer to Figures 1A1-1E2 Embodiment 1 of the present invention is explained with reference to Figs. 2A-2C.

[0064] A feature of the present invention is to form at least one or more components required for manufacturing semiconductor devices and display devices, such as conductive layers for forming wiring layers or electrodes, by means of a method capable of selectively forming desired shapes Or a mask layer used to form a predetermined pattern to manufacture semiconductor devices or display devices. In the present invention, a component part (also referred to as pattern) means a conductive layer such as a wiring layer, a gate electrode layer, a source electrode layer, or a drain electrode layer, a semiconductor layer, a mask layer, insulating layer, etc., and includes all constituent parts formed in a predetermined shape. A droplet emission (jet) method capable of forming a conductive layer, an insulating layer, etc. of a predetermined pattern by selectively emitti...

Embodiment approach 2

[0110] Figure 26A is a plan view showing the structure of the display screen according to the present invention. A pixel portion 2701 in which individual pixels 2702 are arranged in a matrix, scanning line input terminals 2703, and signal line input terminals 2704 are formed on a substrate 2700 having an insulating surface. The number of pixels can be determined according to various criteria. In the case of XGA full-color display using RGB, the number of pixels may be 1024*768*3 (RGB). In the case of UXGA full-color display using RGB, the number of pixels may be 1600x1200x3 (RGB). Whereas in the case of full-spectrum high-definition full-color display using RGB, the number of pixels may be 1920×1080×3 (RGB).

[0111] Pixels 2702 are formed in a matrix at intersections of scanning lines extending from scanning line input terminals 2703 and signal lines extending from signal line input terminals 2704 . Each pixel 2702 is provided with a switching element and a pixel electro...

Embodiment approach 3

[0178] Embodiment 3 of the present invention is explained with reference to Figs. 15A-18B. A method of manufacturing a display device including a top gate type planar thin film transistor in which the present invention is applied is explained in more detail. Figure 17 It is a plan view of the pixel portion of the display device. 15A-16C and 18B are sectional views along line E-F in respective steps. Figure 18A It is also a top view of the display device. Figure 18B is along Figure 18A Sectional view of the line O-P (including U-W) in the center. Note that an example of a liquid crystal display device using a liquid crystal material is described as a display device. Therefore, the same parts or parts with similar functions will not be repeated.

[0179] A glass substrate composed of barium borosilicate glass, aluminoborosilicate glass, or the like; a quartz substrate; a metal substrate; or a plastic substrate capable of withstanding the process temperature in the manuf...

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Abstract

An object of the invention is to provide a semiconductor device and a display device which can be manufactured with improved material efficiency through a simplified manufacturing process, and a manufacturing method thereof. Another object is to provide a technique capable of forming a pattern such as a wiring included in the semiconductor device or display device in a desired shape with good controllability. One feature of a method for manufacturing a semiconductor device is to comprise the steps of forming a layer having a rough surface, forming a region having low wettability by a composition containing a conductive material and a region having high wettability by the composition over the rough surface, and forming a conductive material using the composition in the region having high wettability. Since regions having largely different wettability (regions having a large difference in wettability) can be formed, a liquid conductive or insulating material is attached only to a formation region with precision. Accordingly, a conductive or insulating layer can be precisely formed in a desired pattern.

Description

technical field [0001] The present invention relates to a semiconductor device made by printing method and its manufacturing method. Background technique [0002] Thin-film transistors (hereinafter also referred to as "TFT") and circuits using thin-film transistors are formed by laminating thin films such as various semiconductors, insulating materials, and conductive materials on a substrate, and then using photolithography to properly form predetermined graphics, to manufacture. Photolithography is a technology that uses light to transfer a pattern such as a circuit formed on a transparent plane using a light-impermeable material called a photomask to a target substrate. This technology is widely used in semiconductor integrated circuits such manufacturing processes. [0003] In a conventional manufacturing process using photolithography, multi-stage steps including exposure, development, baking, lift-off, etc., are required to handle a mask pattern composed of a photose...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/28H01L21/768H01L21/336
CPCH01L27/1214H01L27/14683H01L27/14621H01L27/1292
Inventor 森末将文前川慎志
Owner SEMICON ENERGY LAB CO LTD
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