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Etching method, program, computer readable storage medium and plasma processing apparatus

An etching gas and etching technology, applied in water supply equipment, infrastructure engineering, semiconductor/solid-state device manufacturing, etc., can solve problems such as damage and deterioration of the bottom film 101, and reduction of the bottom film 101, so as to suppress damage or deterioration and improve quality Effect

Inactive Publication Date: 2006-08-16
TOKYO ELECTRON LTD
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Problems solved by technology

Therefore, the base film 101 that is not an object of etching is reduced, and the base film 101 tends to be damaged or deteriorated.

Method used

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  • Etching method, program, computer readable storage medium and plasma processing apparatus
  • Etching method, program, computer readable storage medium and plasma processing apparatus
  • Etching method, program, computer readable storage medium and plasma processing apparatus

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Embodiment Construction

[0030] Hereinafter, preferred embodiments of the present invention will be described. FIG. 1 is an explanatory longitudinal cross-sectional view showing a schematic configuration of an etching apparatus 1 for carrying out an etching method according to the present embodiment.

[0031] The etching apparatus 1 has, for example, a substantially cylindrical processing container 10 . A processing chamber S is formed inside the processing container 10 . The processing container 10 is formed of, for example, an aluminum alloy, and the inner wall surface is covered with an aluminum oxide film or a yttrium oxide film.

[0032] A columnar susceptor support 12 is provided at the center bottom of the processing container 10 with an insulating plate 11 interposed therebetween. A susceptor 13 on which a substrate W is placed is supported on the susceptor support table 12 . The susceptor 13 constitutes a lower electrode. Base 13 is formed of, for example, an aluminum alloy.

[0033] An ...

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PUM

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Abstract

The invention relates to an etching method, which can suppress breakage or deterioration of bottom film when etching a stacked insulating film with silicon insulating film coating. The etching method comprises following steps: disposing a substrate (W) with an SOG film and a TEOS film stacked on a titanium nitride film on a pedestal (13) in a processing chamber (S); maintaining reduced pressure in the processing chamber (S), and guiding an etching gas free of O2 but containing C2F8 and N2 into the processing chamber (S) from an upper electrode (30); and applying a high-frequency wave on the pedestal (13) by a high-frequency power supply to form the gas plasma in the processing chamber (S), and etching the stacked film on the substrate (W).

Description

technical field [0001] The present invention relates to an etching method for etching a silicon-based insulating film laminated on a substrate, a program for executing the etching method, a computer-readable recording medium, and a plasma processing apparatus. Background technique [0002] For example, in the manufacturing process of an electronic device having a multilayer wiring structure, for example, a multilayer silicon-based insulating film is formed on a base film of a substrate. Then, the laminated film formed by laminating the silicon-based insulating film is etched into a predetermined shape such as a groove or a hole. Conventionally, this multilayer film is etched layer by layer from the upper layer using, for example, an etching gas containing a CF (fluorocarbon)-based reactive gas. However, from the viewpoint of productivity, a method of simultaneously etching the multilayer film has been proposed (e.g. Refer to Patent Document 1). Furthermore, in order to rem...

Claims

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Application Information

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IPC IPC(8): H01L21/311H01L21/768
CPCE02D29/14E03F5/04E03F2005/0416
Inventor 菊池秋广坂本雄一郎角田崇司
Owner TOKYO ELECTRON LTD
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