Method for controlling formula in silicon chip etching technology

A control method and process technology, applied in the direction of electrical program control, non-electric variable control, control/regulation system, etc., can solve the problems of complicated control of etching equipment process parameters, time-consuming parameter setting methods, inconvenient adjustment, etc.

Active Publication Date: 2006-10-18
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology

Because there are many reaction parameters of etching equipment, there are many kinds of reaction gases (up to more than a dozen), and the reaction conditions need to be changed frequently during the etching process, so the process parameter control of etching equipment is a very complicated task.
[0003] In the previous process parameter control method, each parameter is read in serially, and it is also serial to judge whether each parameter condition is met or not. The method is time-consuming and not easy to adjust

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  • Method for controlling formula in silicon chip etching technology
  • Method for controlling formula in silicon chip etching technology
  • Method for controlling formula in silicon chip etching technology

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Embodiment Construction

[0025] The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention. Those of ordinary skill in the relevant technical field can also make various changes and modifications without departing from the spirit and scope of the present invention. Therefore All equivalent technical solutions also belong to the category of the present invention, and the scope of patent protection of the present invention should be defined by each claim.

[0026] The silicon wafer etching process system realized by the method of the present invention can be divided into the following seven subsystems according to the purpose: vacuum subsystem, gas delivery subsystem, lower electrode subsystem (E_Chuck subsystem), chamber subsystem (chamber subsystem), RF subsystem (radio frequency subsystem), temperature control subsystem (temperature control subsystem), end point subsystem (endpoint subsystem). The structure of the system is as...

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Abstract

The present invention relates to a control method of wafer etching process prescription. It is characterized by that firstly, various control parameters of wafer etching process can be defined as process prescriptions, then in the course of process operation every process prescription can be selected according to the preset mode to control system operation. The described process prescription includes flow rate of various special gases, pressure of reaction cavity chamber, pressure of helium gas, temperature of reaction cavity chamber, reaction time and completion condition of reaction, etc. and different combinations of various parameters. The utilization of said process prescription can better control wafer etching process and can raise wafer quality.

Description

technical field [0001] The invention relates to a semiconductor processing technology, in particular to a control method for a recipe of a silicon chip etching process. Background technique [0002] The silicon wafer etching results are closely related to various etching conditions in the reaction chamber. By changing various gas flow rates, temperature, pressure, reaction time and other conditions in the reaction chamber, the etching results of silicon wafers can be changed (such as etch uniformity, grain size, verticality, etc.). Because there are many reaction parameters of etching equipment, there are many kinds of reaction gases (up to more than a dozen), and the reaction conditions need to be changed frequently during the etching process, so the process parameter control of etching equipment is a very complicated task. . [0003] In the previous process parameter control method, each parameter is read in serially, and it is also serial to judge whether each parameter...

Claims

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Application Information

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IPC IPC(8): H01L21/00G03F7/00G05B19/04G05D27/00H01L21/02
Inventor 张继宏
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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