Structure for mounting loading table device, processing device, discharge prevention method between feeder lines

Abstract

The present invention provides one kind of carrying stage device with hollow legs maintained in the no discharge pressure atmosphere to avoid discharge between feed lines. The carrying stage device installed inside some container capable of being vacuumized with an installation structure has one carrying stage with heating mechanism, supporting hollow legs, the feed lines for connecting the heating mechanism and other parts. The installation structure includes an installing stage set on the opening in the bottom of the container, one sealing metal part of soft metal material between the legs and the installing stage, one fixing mechanism to fix the lower ends of the legs to the installing stage, one inert gas supplying mechanism to supply inert gas to the legs to avoid discharge and one exhausting mechanism to exhaust the atmosphere from the legs.

Description

technical field [0001] The present invention relates to a treatment device for performing heat treatment such as film formation treatment on a target object such as a semiconductor wafer in a vacuum atmosphere, a mounting structure of a stage device used therein, and a method for preventing electric discharge between feeders in the stage device . Background technique [0002] In general, in order to manufacture a semiconductor integrated circuit, various processes such as film formation, etching, thermal diffusion, and modification are repeatedly performed on a target object such as a semiconductor wafer to form a desired integrated circuit. [0003] As an example, for example, a single-chip processing device for heat-treating each semiconductor wafer is described. In a processing container that can be evacuated, for example, a mounting table with a built-in resistance heater made of molybdenum wire is installed on the bottom of the container. The upper end of the upright l...

AI Technical Summary

Problems solved by technology

That is, in the case of Method 1, since the pressure inside the hollow leg portion is equal to or higher than atmospheric pressure, a large amount of inert gas flows into the processing container, and this inflowing inert gas may adversely affect the semiconductor wafer being processed.

[0013] In addition, in the case of method 2, the heat-resistant temperature of the O-ring as the sealing member is, for example, about 240° C., so in the heat treatment process, when the temperature of the sealing member exceeds the heat-resistant temperature, the sealing performance is deteriorated and cannot be fully sealed. In order to fully exert the anti-discharge function, it is necessary to frequently perform maintenance work such as replacement of sealing parts

In addition, the pressure in the hollow leg changes with the temperature of the resistance heater, but usually, in order to suppress the heat dissipation caused by heat conduction as much as possible, the thickness of the leg is very thin, so the above-mentioned pressure changes repeatedly, so sometimes this damage to the foot itself

[0014] In addition, in the case of method 3, since the lower end of the leg is joined in a completely airtight state by welding or the like, if there is any inconvenience, not only the maintenance work cannot be performed, but also the joint part is subject to thermal stress concentration and becomes damaged. reason

In addition, as in the case of method 2 above, the pressure changes in the hollow leg, and the leg itself may be damaged.

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