Solid-state image sensing device and method for fabricating the same

A technology for a solid-state imaging device and a manufacturing method, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, radiation control devices, etc., can solve the problems of miniaturization limitations and other problems, and achieve the effect of reducing manufacturing costs.

Inactive Publication Date: 2007-01-24
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0015] Furthermore, since there is an air layer 110 between the solid-state imaging device 113 and the tran

Method used

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  • Solid-state image sensing device and method for fabricating the same
  • Solid-state image sensing device and method for fabricating the same
  • Solid-state image sensing device and method for fabricating the same

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no. 1 approach

[0080] Hereinafter, the solid-state imaging device and its manufacturing method according to the first embodiment of the present invention will be described with reference to the drawings. In addition, each drawing shows the state after dicing a wafer (wafer) into a solid-state imaging device (chip) unless otherwise specified.

[0081] figure 1 , is a cross-sectional view of the solid-state imaging device according to the first embodiment of the present invention. Yet, figure 1 In , the appearance of light incident on the microlens of the solid-state imaging device according to the present embodiment is also shown together.

[0082] Such as figure 1 As shown, a photodiode 2 for converting incident light into an electrical signal is provided on the bottom of a recess provided for each pixel on the surface of a charge junction device (CCD) type solid-state imaging device substrate 1 . On the substrate 1 for a solid-state imaging device, a first acrylic smoothing film 3 fo...

no. 2 approach

[0119] Hereinafter, a solid-state imaging device and a manufacturing method thereof according to a second embodiment of the present invention will be described with reference to the drawings. The biggest difference between the second embodiment and the first embodiment is that before the formation of the resin layer, a spacer is provided around the light receiving area (pixel area) to define the thickness of the resin layer. This facilitates regulation of the thickness of the fluorine-containing element resin material layer, that is, the resin layer serving as the adhesive layer between the semiconductor substrate and the transparent substrate.

[0120] Figure 7(a) to Figure 7(f) 8( a ) to FIG. 8( d ), each step of the method of manufacturing the solid-state imaging device according to this embodiment is shown. Shang, in Figure 7(a) to Figure 7(f) and Figure 8(a) to Figure 8(d), and figure 1 and Figure 2(a) to Figure 2(f) Components that are the same as those of the so...

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Abstract

To stably supply a solid-state imaging device having a high sensitivity. A microlens 6 is formed on a photodiode 2. A resin material layer 7 containing fluorine is formed on the microlens 6. A transparent substrate 9 is provided above the resin material layer 7. The resin material layer 7 and the transparent substrate 9 are bonded with a resin layer 8 disposed therebetween.

Description

technical field [0001] The present invention relates to a solid-state imaging device formed of a solid-state imaging element and a transparent substrate protecting it and a manufacturing method thereof. Background technique [0002] In a solid-state imaging device using a charge coupled device (CCD=Charge Coupled Device), etc., the area of ​​a photodiode serving as a light receiving portion is gradually reduced due to demands for miniaturization and high resolution. In order to make up for the reduction in light collection efficiency associated with such a reduction in the area of ​​the light receiving part, so-called microlenses (microlens) have been developed and used. This microlens is usually made of resin, and is provided above the light receiving portion formed for each pixel. In addition, the microlens concentrates the light that refracts and does not directly enter the light-receiving part to the light-receiving part, thereby improving the light-collecting efficienc...

Claims

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Application Information

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IPC IPC(8): H01L27/148H01L27/14H01L21/822H01L21/50H04N5/335H04N5/369H04N5/372
Inventor 樋口敏弘驹津智子桝田知树本庄护友田尚纪
Owner PANASONIC CORP
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