Solid-state image sensing device and method for fabricating the same
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- PANASONIC CORP
- Publication Date
- 2007-01-24
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The present invention relates to a solid-state imaging device formed of a solid-state imaging element and a transparent substrate protecting it and a manufacturing method thereof. Background technique
[0002] In a solid-state imaging device using a charge coupled device (CCD=Charge Coupled Device), etc., the area of a photodiode serving as a light receiving portion is gradually reduced due to demands for miniaturization and high resolution. In order to make up for the reduction in light collection efficiency associated with such a reduction in the area of the light receiving part, so-called microlenses (microlens) have been developed and used. This microlens is usually made of resin, and is provided above the light receiving portion formed for each pixel. In addition, the microlens concentrates the light that refracts and does not directly enter the light-receiving part to the light-receiving part, thereby improving the light-collecting efficienc...