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Semiconductor element and its producing method

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems that are not conducive to the reduction of semiconductor components, the inability to improve the integration of components, and limited efficacy, so as to reduce the short channel effect, Increase the integration of components and reduce the effect of electric field

Active Publication Date: 2007-01-24
PROMOS TECH INC
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, since the process of forming such a semiconductor device requires multiple thermal processes, the ions doped in the pocket-type doped region will be diffused, so the effect on suppressing the short channel effect is really limited.
Moreover, setting the pocket-type doped region 116 and the lightly doped region 114 in the semiconductor element will not be conducive to the reduction of the size of the semiconductor element, and cannot improve the integration of the element.

Method used

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  • Semiconductor element and its producing method
  • Semiconductor element and its producing method
  • Semiconductor element and its producing method

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Embodiment Construction

[0056] Figure 2A What is shown is a schematic structural view of a semiconductor device according to a preferred embodiment of the present invention.

[0057] Please refer to Figure 2A The semiconductor device of the present invention is at least composed of a substrate 200, a gate structure 202, a source region 204, a drain region 206, and a dielectric barrier layer 210 (Dielectric barrier).

[0058] The gate structure 202 is, for example, disposed on the substrate 200 . The gate structure 202 is composed of, for example, a gate dielectric layer 214 , a gate conductor layer 216 and a top cap layer 218 . The material of the gate dielectric layer 214 is, for example, silicon oxide. Of course, the material of the gate dielectric layer 214 may also be other dielectric materials commonly used as gate dielectric layers. The material of the gate conductor layer 216 is, for example, doped polysilicon. Of course, the material of the gate conductor layer 216 may also be metal or o...

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Abstract

A semiconductor element includes a grating structure, a source region, a drain region and a pair of dielectric blocking layers, in which, the grating structure is set on the base, the source region and the drain region are set on the base at either side of the grating and a channel region is set between the two regions and under the grating structure, the a pair of dielectric blocking layers are set on the base under the grating structure and between the two regions to reduce the reduction of effect by block caused by the drain.

Description

technical field [0001] The invention relates to a semiconductor element and a manufacturing method thereof, in particular to a metal oxide semiconductor element suitable for nanoscale elements and a manufacturing method thereof. Background technique [0002] With the increasing integration of integrated circuits, the size of semiconductor elements is also shrinking. When the size of Metal Oxide Semiconductor (MOS) transistors shrinks, the channel length must also shrink accordingly. However, the channel size of MOS transistors cannot be scaled down without limit. When its length is reduced to a certain extent, various problems will occur due to the reduction of the channel length. This phenomenon is called the short channel effect. In addition to the so-called short-channel effect, which will cause the initial voltage (Vt) of the element to drop and cause problems with the control of the gate voltage (Vg) on ​​the MOS transistor, another phenomenon of breakdown effect will...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336
Inventor 周志文朱志勋
Owner PROMOS TECH INC