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Image sensor from CMOS transistors, and manufacturing method

An oxide semiconductor and image sensor technology, which can be used in semiconductor/solid-state device manufacturing, radiation control devices, electrical components, etc. Improve photosensitive efficiency, save process cost, simple and uncomplicated process

Active Publication Date: 2007-02-21
UNITED MICROELECTRONICS CORP
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  • Abstract
  • Description
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Problems solved by technology

However, when the external light passes through the light passageway in the conductive interconnection, if it is not directly transmitted to the photodiode, the light will be absorbed by the dielectric layer or protective layer on the surface of the light passageway, so Reducing the Sensitive Performance of Complementary Metal-Oxide-Semiconductor Transistor Image Sensors

Method used

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  • Image sensor from CMOS transistors, and manufacturing method
  • Image sensor from CMOS transistors, and manufacturing method
  • Image sensor from CMOS transistors, and manufacturing method

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Embodiment Construction

[0062] figure 1 It is a schematic cross-sectional view of a CMOS image sensor according to an embodiment of the present invention.

[0063] Please refer to figure 1 , the CMOS image sensor of the present invention comprises a light sensing element 102, a transistor 104, a ring post reflection layer 142, a protective layer 136, a transparent material layer 146, a material layer 145, a filter film 148, a light concentrating Component 150 and dielectric layers 106, 107. Wherein, the light sensing element 102 is disposed in the light sensing region 101 of the substrate 100, the light sensing element 102 is, for example, a photodiode; and the transistor 104 is disposed on the transistor region 103 of the substrate 100, and the transistor 104 and the light sensing The measuring element 102 is electrically connected. The transistor 104 includes a gate dielectric layer 104a, a gate 104b, a source / drain region 104c and a spacer 104d. The dielectric layer 106 is disposed on the subs...

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Abstract

The image sensor in CMOS transistor includes light sensing component, at least transistor, and first dielectric layer, ring pillar reflecting layer, second dielectric layer, protective layer, material layer, transparent material layer, light filter, and condensation component. Light sensing component is setup in light sensing area. Being prepared on transistor area of substrate, transistor is connected to light sensing component electrically. Being configured on substrate, first dielectric layer covers transistor and light sensing component. Ring pillar reflecting layer is setup on first dielectric layer in light sensing area. Second dielectric layer is configured on first dielectric layer outside ring pillar reflecting layer. Protective layer is placed on second dielectric layer. Material layer is setup on first dielectric layer in inner side of ring pillar reflecting layer. Transparent material layer is on material layer, protective layer, and ring pillar reflecting layer etc.

Description

technical field [0001] The present invention relates to an optical device and its manufacturing method, in particular to a complementary metal oxide semiconductor transistor image sensor and its manufacturing method. Background technique [0002] Complementary metal-oxide-semiconductor transistor image sensor (CMOS image sensor, CIS) is compatible with the process of complementary metal-oxide-semiconductor transistors, and can be easily integrated with other peripheral circuits on the same chip, so it can greatly Reduce the cost and power consumption of the image sensor. Therefore, CMOS image sensors have become a substitute for charge coupled devices (CCDs) in low-cost applications in recent years, making CMOS image sensors The importance of measuring instruments is increasing day by day. [0003] U.S. Patent No. 6,861,686B2 (U.S.Pat.No.6,861,686 B2), which discloses a structure and manufacturing method of a complementary metal-oxide-semiconductor transistor image sensor,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L21/82
Inventor 李秋德
Owner UNITED MICROELECTRONICS CORP
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